On April 30, IT Home reported that Samsung Electronics shared the technical information and future outlook of its semiconductor related business in the first quarter financial report released today. IT Home sorted out the following:
System LSI
Samsung said that the recovery of the overall wafer foundry business was relatively delayed, but the operating efficiency of the wafer factory has improved to a certain extent.
In terms of technology, Samsung said that its 3nm and 2nm node technology has developed smoothly and will Complete the development of 2nm design infrastructure this quarter ； And in In terms of 4nm nodes, the yield is gradually stable 。
Samsung is preparing a standard version of 4nm technology suitable for 3D IC, and plans to develop infrastructure suitable for 14nm, 8nm and other mature nodes to meet the needs of different applications.
Samsung confirms that it still It is planned to achieve mass production of the second generation 3nm technology in the second half of the year And improve the maturity of 2nm technology.
storage
Samsung said that it has started mass production of HBM3E 8H (8-layer stack) memory this month, and plans to HBM3E 12H products with 36GB single stack capacity will be mass produced in this quarter 。 Samsung will continue to increase HBM supply to meet the demand of the generative AI market.
For conventional DDR5, Samsung's 32Gb DDR5 based on the 1bnm (12nm) process will also be mass produced this quarter. Samsung plans to achieve faster capacity climb on this product To enhance the competitiveness of enterprises in the high-density DDR5 module market.
Samsung's 1bnm 32Gb DDR5 memory was released in September last year, when it was planned to mass produce at the end of 2023.
In the field of NAND flash memory, Samsung further clarified the QLC version will be mass produced in the third quarter 。
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