This entry is missingOverview, add relevant content to make the entry more complete, and it can also be upgraded quickly. Hurry upeditCome on!
EDO DRAM, expandingdata outputMemory.It is a patented technology of Micron Corporation.There are 72 lines and 168 lines, 5V voltage, 32bit bandwidth, and basic speed of more than 40ns.
EDO DRAM (Extended Data Output RAM), extendeddata outputMemory.It is a patented technology of Micron Corporation.There are 72 lines and 168 lines, 5V voltage, 32bit bandwidth, and basic speed of more than 40ns.
Traditional DRAM and FPM DRAM must output when accessing each bit of dataLine AddressThe effective data can be read or written only after the column address and column address are stabilized for a period of time. The address of the next bit must wait for this read/write operation to complete before output.EDO DRAM does not have to wait for the completion of the data read/write operation. As long as the specified effective time is up, it can be ready to output the next address, thus reducing theAccess timeThe efficiency is 20% - 30% higher than FPM DRAM.It has a high performance/price ratio, because its access speed is 15% faster than FPM DRAM, while its price is only 5% higher.
