CMP series

• The post-CMP cleaning solutions that can efficiently clean metallic impurities, particles, and organic substances remaining on wafers after CMP without damaging a variety of metallic materials and interlayer dielectrics.

Product Line

Products	Applicable process	pH	Features
CMP-M02	Cu-CMP W-CMP	Acidic	・高速metallic impurity removal performance
CMP-M200 series	W-CMP	Acidic	・High organic residue removal performance ・Also removes fine particles
CMP-M300 series （开发品）	Cu-CMP W-CMP	Acidic	●颗粒去除性高于CMP-M02
CMP-B200 series	Cu-CMP Co-CMP	Alkaline	・High organic residue removal performance ・Applicable to a variety of barrier metals（Ta，Ti，Co，and Ru）
CMP-B300 series	STI-CMP, ILD-CMP	Acidic	・High ceria slurry removal performance ・Inhibits damage to dielectrics and W
CMP-ML series （开发品）	Co-CMP	Mildly acidic – Mildly alkaline	・High organic residue removal performance

Features

CMP-M02

• CMP-M02可作为Cu-CMP、W-CMP后的后清洗液使用。
• 是晶片上的金属杂质的除去能力高的产品。
• 其他配线材料等几乎不会造成损伤。

CMP-M200 series

• CMP-M200系列为W-CMP后用清洗液。
• W、SiN上的微小粒子、有机残渣的去除能力高的产品。
• 对其他布线材料等几乎不造成损伤。

CMP-B200 series

• The cleaning solutions with high capability to remove particles and organic residues on Cu.
• This series of products cause little damage to other wiring materials and barrier metals.

CMP-B300 series

• The cleaning solutions with very high ceria abrasive removal capability after STI-CMP and ILD-CMP.
• The damage to dielectrics can be inhibited compared to DHF.

Products