high frequency triode It is a semiconductor device that can work at high frequencies. It is mainly used to amplify and switch high-frequency signals. high frequency triode It is widely used in wireless communication, radar, television, wireless network and other fields. 1、 Composition: high frequency triode It consists of three main parts: emitter, base and collector. These three parts are formed by doping different types of impurities in semiconductor materials (usually silicon or germanium). Depending on the type of doping, triode It can be divided into NPN type and PNP type. 2、 Features: 1. High frequency response: high frequency triode Capable of operating at frequencies up to several GHz. 2. Small size: in order to reduce parasitic capacitance and improve frequency response triode Usually lower frequency triode Small. 3. Low noise: In high-frequency applications, low noise is a very important characteristic. 4. High gain bandwidth product: high frequency triode Its gain bandwidth product (fT) is high, which is an important parameter to measure its amplification ability at high frequencies. 5. Optimized structure: in order to improve frequency performance, high frequency triode The base region of is very thin to reduce carrier transmission time. 3、 Principle: high frequency triode Working principle and general triode be similar. When an appropriate voltage is applied between the base and emitter, a few carriers will pass through the base and be collected by the collector, thus controlling the collector current. In high-frequency applications, triode The carrier transmission time should be as short as possible to reduce signal delay and phase distortion. 4、 Purpose: High frequency triode Widely used in: ● RF amplifier ● Oscillator ● Mixer ● Switching circuit ● Wireless communication equipment ● High speed digital circuit 5. Installation: High frequency triode Pay attention to the following points during installation of: 1. Heat dissipation: high frequency triode Heat will be generated during operation, and good heat dissipation measures, such as heat sink or fan, are required. 2. Wiring: High frequency circuit has strict requirements on wiring. The lead length should be shortened as far as possible to reduce the impact of parasitic capacitance and inductance. 3. Anti static: Anti static measures shall be taken during installation to avoid static damage triode 。 4. Welding: high frequency triode The welding of shall be carried out quickly to avoid long-term heating

silicon carbide triode (Silicon Carbide Transistor, SiC for short) triode ）It is a STM32F401RCT6 using silicon carbide (SiC) as semiconductor material triode 。 It has excellent high temperature, high voltage and high frequency characteristics, and can replace the traditional silicon materials triode In high temperature, high voltage, high frequency and other special environments, better performance can be achieved. 1、 Basic structure: silicon carbide triode Its basic structure includes P-type doped region, N-type doped region and N-type doped region. The structure between the P-type doped region and the N-type doped region forms a PN junction, which plays a rectifying role. The structure between the P-type doped region and the N-type doped region forms a diode. The structure between the N-type doped region and the N-type doped region forms the NPN type triode 。 The whole structure is encapsulated in a metal shell to protect the device from the impact of the external environment. 2、 Advantages and disadvantages: silicon carbide triode Compared with traditional silicon materials triode It has the following advantages: 1. High temperature characteristics: silicon carbide has high thermal conductivity and thermal stability, can work normally under high temperature environment, and is suitable for applications under high temperature conditions. 2. High voltage characteristics: silicon carbide has high breakdown electric field strength, can withstand high voltage, and is suitable for high-voltage applications. 3. High frequency characteristics: silicon carbide has high electron migration speed and small capacitance effect, which can realize high-speed switching and high-frequency operation. 4. Low conduction loss: the conduction loss of silicon carbide is low, which can improve energy efficiency and save energy. However, silicon carbide triode There are also some disadvantages: 1. High manufacturing cost: the manufacturing and processing technology of silicon carbide materials is still relatively complex and expensive compared with mature silicon materials. 2. Difficult manufacturing process: due to the special properties of silicon carbide materials, manufacturing silicon carbide triode The process is relatively difficult and the production efficiency is low. 3、 Working principle: silicon carbide triode The working principle of triode be similar. When the forward voltage is applied to the PN junction, the holes in the P region and the free electrons in the N region will diffuse to the isolated region. When a forward voltage is applied to the base, free electrons in the N region will be attracted to the base, forming electron holes

Band stop triode Darlington Transistor is a special P6KE200A bipolar (BJT) transistor, which is composed of two transistors in cascade. It has the characteristics of high current magnification and low input current, and is often used in application circuits requiring high current amplification. 1、 Basic structure: band stop triode It is composed of two transistors in series. The first transistor is called the input stage (front stage), and the second transistor is called the output stage (back stage). The collector of the input stage is directly connected to the base of the output stage, and the collector of the output stage serves as the whole band stop triode The output terminal of. 2、 Operating principle: band stop triode Its working principle is based on the conductive characteristics of PN junction. When the voltage between the emitter junction and the base is positive offset, the emitter junction will become conductive. At this time, electrons in the emitter will be injected into the base to form a current. If a reverse bias voltage is applied between the collector junction and the base, the collector junction will become a reverse bias state, thus preventing current from passing through. Therefore, band stop triode The amplification effect of depends on the size of the control base current. 3、 Resistance ratio: band resistance triode The resistance ratio of is the ratio between the base current (IB) and the collector current (IC), which is recorded as β。β The typical value of is between 20 and 1000, and different BJT models have different β Value. β The value of determines the amplification ability of BJT β Value means a greater magnification. 4、 Common models: common NPN BJT models include 2N3904, 2N2222, BC547, etc. These models are low-power general-purpose BJTs, suitable for most low-power applications. NPN BJT is characterized by the same current direction between the base and emitter. Common PNP BJT models include 2N3906, 2N2907, BC557, etc. These models are also low-power general-purpose BJTs, suitable for most low-power applications. PNP BJT is characterized by the opposite current direction between the base and emitter. In addition to general BJT, there are some special BJT models, such as power BJT, high-frequency BJT, etc. These models have higher current and power

Silicon photoelectricity triode It is a BT138-600E photoelectric converter, which converts optical signals into electrical signals by photoelectric effect. It has simple structure, high sensitivity, fast response speed and other characteristics, and is widely used in photoelectric detection, communication, photoelectric measurement and other fields. 1、 Basic structure: silicon photoelectric triode Its structure is basically similar to that of an ordinary silicon triode transistor, which is mainly composed of a PN structure. The emitter is P-type area, the collector is N-type area, and the base is P-type or N-type area. The formation of PN structure makes silicon photoelectric triode It can convert optical signals into electrical signals. 2、 Advantages and disadvantages: silicon photoelectric triode It has the following advantages: 1. High sensitivity: silicon photoelectric triode It is very sensitive to the response of optical signals and can detect very small optical signals. 2. Fast response speed: silicon photoelectric triode Its response speed can reach microsecond level, which is suitable for high-speed photoelectric detection. 3. Good reliability: silicon photoelectric triode It has the characteristics of long life, stability and reliability. 4. Economical and practical: silicon photoelectric triode The manufacturing cost of is relatively low. Silicon photoelectricity triode The disadvantages include: 1. High noise: silicon photoelectric triode Some noise signals will be generated during the operation. 2. Poor wavelength selectivity: silicon photoelectric triode It has poor selectivity to wavelength and can only receive optical signals within a certain wavelength range. 3. Large temperature influence: silicon photoelectric triode The working performance of is easily affected by temperature. 3、 Operating principle: silicon photoelectric triode Its working principle is based on the photoelectric conversion principle of PN junction. When the light irradiates the photosensitive electrode, the photon energy will make the electrons in the photosensitive electrode transition from the valence band to the conduction band, and generate holes at the same time. These electrons and holes are the carriers in the photosensitive electrode. In the case of positive bias, the electrons in the photosensitive electrode will be pushed to the base area, and the holes will be pushed to the emitter area. Due to the voltage between the base and emitter, electrons will form a current between the base area and the emitter, and generate an output signal at the emitter. 4、 Application: silicon photoelectric triode Widely used in the following fields: 1. Photoelectric detection: silicon photoelectric triode It can be used for receiving and detecting optical signals, such as photoelectric switches, photoelectric sensors, etc. 2. Communication: silicon photoelectric triode sure

NPN type triode It is a commonly used electronic component, widely used in electronic circuits. It is an IRS2003STRPBF bipolar transistor, which consists of three regions: emission region, base region and collector region. NPN type triode The basic structure, performance characteristics, working principle, application, experimental methods, component functions and market prospects of the are introduced in detail. 1、 Basic structure: NPN type triode It is composed of a P-type semiconductor material sandwiched between two N-type semiconductor materials. The P-type material sandwiched in the middle is called the base area, and the N-type material on both sides is called the emission area and the collector area respectively. There is a PN junction between the transmitting region and the base region, and there is also a PN junction between the collecting region and the base region. 2、 Features: 1. Amplification: NPN type triode It can amplify the current and voltage, and can amplify the weak current or voltage of the input signal into the larger current or voltage of the output signal. 2. Switch action: NPN type triode In the saturation state, the circuit can be fully turned on to play the role of switch. In the cut-off state, the circuit is disconnected, playing the role of disconnection. 3. High input impedance: NPN type triode The base input impedance of is high, which can reduce the impact on the input signal source. 4. Fast response: NPN type triode Its switching speed is fast, and it can quickly respond to input signals. 5. Good stability: NPN type triode The working stability is good, and it can work normally under different temperature and voltage conditions. 3、 Operating principle: NPN type triode The working principle of the PN junction is based on the forward and reverse bias of the PN junction. When the voltage between the base and emitter is a positive bias, the electrons in the base will move to the emission region, forming a current. This current will be collected by the collector to form an amplified current. When the voltage between the base and emitter is reverse biased, the current cannot flow. 4、 Application: NPN type triode It is widely used in various electronic circuits, including amplifiers, oscillators, switching circuits, regulated power supplies, logic gates, etc. In the amplifier, it can amplify audio signal, RF signal and other low-frequency signals. In the switching circuit, it can be used to control the current and voltage switches to achieve the switching function of the circuit. five

Darlington triode It is a special EP1C20F400C8N amplifier circuit composed of two transistors cascaded. It consists of two NPN type or PNP type transistors cascaded. The emitter of one transistor is connected to the base of the other transistor, and the collector is connected to the output. The following is about Darlington triode Detailed description of. 1、 Basic structure: Darlington triode It is composed of two transistors cascaded, one of which is called the input stage and the other is called the output stage. The emitter of the input stage is connected to the base of the output stage, and the collector of the output stage is connected to the output terminal. This cascade structure makes Darlington triode It has high current magnification and low input resistance. 2、 Features: 1. High current magnification: Darlington due to cascade structure triode The current amplification factor of is high, which can reach hundreds to thousands of times. 2. Low input resistance: the emitter of the input stage is connected to the base of the output stage, so that Darlington triode The input resistance of is low, which can reduce the voltage drop between the signal source and the amplifier. 3. High output resistance: due to the cascade structure, Darlington triode The output resistance of is high and can provide large output current. 4. High gain bandwidth product: Darlington triode Its gain bandwidth product is high and suitable for high frequency amplifier circuits. 3、 Working principle: Darlington triode The principle of operation is similar to that of ordinary transistors. When the input signal is applied to the input terminal, the base current of the first transistor (drive transistor) will be amplified to control the current of the second transistor (output transistor). The current of the output transistor passes through the load resistance to form an output signal. Due to the cascade effect, the current of the output transistor can be several times of the input current, realizing the purpose of current amplification. 4、 Application: Darlington triode It is often used in circuits requiring high current amplification, such as power amplifiers, switching circuits and drive circuits. It can provide large output current, and is suitable for driving motors, relays and other equipment that need high power. 5、 Cause of fault: Darlington triode Common fault causes include: 1. Too high temperature: Darlington will be caused by long-time operation or too high ambient temperature triode The transistor may be damaged or welded

Paster triode (Surface Mount Transistor) is a common electronic component used in amplification and switching circuits. It is made by surface mount technology, small and light, suitable for high-density circuit board design. Paster triode It has good high-frequency characteristics, fast transmission speed, low power consumption and other characteristics, and is widely used in mobile communications, computers, television, audio and other electronic equipment. 1、 Paster triode Principle patch of triode It is an AD706JRZ-REEL7 bipolar transistor, which is composed of three different doped semiconductor layers: emission region (N region), base region (P region) and collector region (N region). According to the different doping, it can be divided into NPN type and PNP type. NPN patch triode : The transmitting area is N type, the base area is P type, and the collecting area is N type. PNP patch triode : The emission area is of type P, the base area is of type N, and the collector area is of type P. Paster triode The working principle of the PN junction is based on the forward and reverse bias of the PN junction. When paster triode In the amplification state, the PN junction between the transmitting region and the base region is forward biased, and the PN junction between the collecting region and the base region is reverse biased. In this way, when the input signal is applied to the base, the current between the emitter and the collector will change to achieve signal amplification. 2、 Paster triode Structure patch of triode It is manufactured by surface mount technology (SMT), and its structure is relatively simple. It is generally composed of four main components: 1. Emission area: patch triode The emission region of is a semiconductor region with high doping concentration, which is usually N-type or P-type. Its main function is to inject carriers into the base region. 2. Base area: patch triode The base region is a semiconductor region with low doping concentration, which is usually P type or N type. Its main function is to control the number of carriers injected into the transmitting region. 3. Collecting area: patch triode The collector region of is a semiconductor region with high doping concentration, which is usually N-type or P-type. Its main function is to collect carriers injected through the base region. 4. Metal pin: SMD triode There are usually three metal pins, namely, emitter, base and collector, used to connect the circuit. 3、 Functions and requirements: 1. Functions: three pole patch

photoelectricity triode Phototransistor is a semiconductor device that can convert optical signals into electrical signals. It is a photosensitive element based on common transistor structure and a photoelectric converter, also known as EP2S90F1020I4N photosensitive triode 。 photoelectricity triode With common triode However, a photosensitive material is added to the base region to enable it to respond to light and convert optical signals into electrical signals. photoelectricity triode Usually used in photoelectric control, photoelectric measurement, photoelectric detection and other fields. 1、 Photoelectric triode Structure and working principle of photoelectric triode Structure and common triode Their structures are basically the same, including a base, an emitter and a collector. And common triode The difference is that photoelectric triode A photosensitive material is added in the base region to enable it to respond to light and convert optical signals into electrical signals. photoelectricity triode Working principle and general triode The working principle of is basically the same, except that under light, the absorption of photons will excite electrons and holes, which will change the concentration of electrons and holes, thus changing the conductivity of the base region. When photosensitive triode When light is received at the base of the, electrons and holes are excited and recombine in the base region, which changes the conductivity of the base region. The change of conductivity will affect the change of collector current and emitter current, thus realizing the conversion of optical signal to electrical signal. 2、 Photoelectric triode Classification photoelectric triode According to different photosensitive materials, it can be divided into silicon photoelectric triode Germanium photoelectricity triode GaAs photoelectric triode Etc. Among them, silicon photoelectric triode And germanium photoelectricity triode Are the two most common photoelectric triode 。 1. Silicon photoelectricity triode Silicon photoelectricity triode It is a kind of photosensitive element based on silicon transistor structure. Silicon photoelectricity triode Its photosensitive material is usually silicon, which has low sensitivity and slow response speed, but is relatively cheap, and is widely used in some low frequency, low-speed photoelectric control, measurement and detection fields. 2. Germanium photoelectricity triode Germanium photoelectricity triode It is a kind of photosensitive element based on germanium transistor structure. Germanium photoelectricity triode Germanium is usually the photosensitive material of

photoelectricity triode It is a device for photoelectric conversion, which can convert optical signals into electrical signals. It is characterized by simple structure, high sensitivity, fast response speed, convenient use, etc. It is widely used in photoelectric communication, photoelectric measurement, photoelectric control and other fields. 1、 Photoelectric triode Principle of photoelectric triode The principle of SN65176BDR is based on photoelectric effect. Photoelectric effect refers to the phenomenon that the electrons on the surface of metal or semiconductor are excited by energy and leave the atom to become free electrons under light irradiation. When the photon energy is greater than the semiconductor band gap width, after the photon is absorbed, the electron and hole pairs in the semiconductor will be excited to form electron hole pairs. These electron hole pairs will be separated by electric field to form current, namely photocurrent. photoelectricity triode It is a PNP type semiconductor device, which is composed of base area, emission area and collector area. When the emission area is illuminated by light, the photon is absorbed and the electron hole pair is excited. The electron and hole move to the collector area and the base area respectively, forming a current. At this time, a large number of carriers are injected into the base region, forming a reverse bias of the PN junction, thus increasing the current magnification. 2、 Photoelectric triode High sensitivity: photoelectric triode Its sensitivity is higher than that of photodiodes and photodiodes, which can provide higher photoelectric conversion efficiency. 2. Fast response speed: photoelectric triode Its response speed is faster than that of photodiodes and photodiodes, which can realize faster signal transmission. 3. Good stability: photoelectric triode Its stability is better than that of photodiodes and photodiodes, and it can be used in a wider temperature range. 4. Wide range of circuit applications: photoelectric triode It can be used as a key element in photoelectric converter, photoelectric amplifier, photoelectric switch and other circuits. 3、 Photoelectric triode Test method of photoelectric triode The test methods of PCK mainly include photocurrent test and photoresist test. 1. Photocurrent test: aim the light source at photoelectric triode Emission area of, measuring photoelectricity triode Photocurrent. The photocurrent is proportional to the intensity of the light source triode Sensitivity. 2. Photosensitive resistance test: triode Put it in the dark, measure its resistance, and then aim the light source at the photoelectric triode And measure the resistance value again to calculate the photoelectric

triode Transistor is a semiconductor device, which has the functions of amplification, switching, etc. It is one of the indispensable components in modern electronic technology. in use triode Before, it needs to be turned on for normal operation. triode With the advantages of small size, low cost, long life and high reliability, it is an indispensable part of modern electronic technology. Turn on light triode Test instruments, such as multimeter, CY2305SXC-1HT oscilloscope, are required for the process of. Before opening the light, you need to understand triode The basic structure and working principle of. triode Its basic structure includes three areas: P type area, N type area and P type area. The N-type area is the thin layer in the middle, called the base area, and the P-type area on both sides, called the emitter and collector. When a small signal voltage is applied to the base area, it will cause the current change in the base area, thus controlling the current change in the collector area. This change can be used as a control signal for amplification or switching. 1、 Feature 1. Magnification function: triode When the input signal is very small, the input signal can be amplified by controlling the size and direction of the current. 2. Switch function: triode With switching function, it can realize the state transition of the switch under the action of current and voltage. 3. Voltage stabilization function: triode The voltage stabilizing function of can keep the output voltage at a fixed value, which is not affected by the fluctuation of input voltage. 4. Good temperature stability: triode Its temperature stability is good, and it can work normally in a wide temperature range. 2、 Principle triode It is composed of three different doped semiconductor materials, namely: emission region, base region and collector region. When voltage is applied to the emission area, an electron cloud will be formed, which is the emission source of electrons. The pn junction between the transmitting region and the base region is triode An important part of the control current. When triode When a positive voltage is applied to the base of the emitter, the electrons in the base are attracted to the emitter, forming a current, which is called collector current. When the voltage of the base is zero, triode Cut off, the current collection is zero. When a negative voltage is applied to the base

constant current triode Is a special triode It can achieve constant collector current output by controlling the base current. In electronic circuits, constant current triode It is widely used in power supply, current source, current control and other fields. 1、 Constant current triode Structure constant current of triode LM393N structure and common triode Similarly, it is composed of emitter, base and collector. However, constant current triode Some special designs are made in the structure, such as adding a current stabilizing diode, so that it can achieve constant collector current output. Wherein, R1 is the current limiting resistance, R2 is the base resistance, RG is the current stabilizing diode, and C is the bypass capacitor. The current stabilizing diode is a constant current triode Its main function is to keep the current constant under constant voltage. 2、 Constant current triode Constant current output: constant current under normal working condition triode The collector current of is basically independent of the input voltage and output load, so it has a constant current output characteristic. 2. High precision: constant current triode With high-precision current output, it can usually achieve an accuracy of about 0.1%. 3. Good stability: constant current triode It has good temperature stability and power supply stability, and can work in a wide range of temperature and power supply fluctuations. 4. Low noise: due to constant current triode Its current output is stable, so its noise level is low. 5. Low output voltage: constant current triode The output voltage of is usually low, usually between several hundred mV and several volts. 3、 Constant current triode Application skills of 1. Constant current source: due to constant current triode It has the characteristics of high precision and good stability, so it is often used in the design of constant current source. For example, in power supply design, constant current can be used triode To provide a constant current output to ensure the stability of the circuit. 2. Current control: constant current triode It can also be used for current control, such as constant current in LED drive circuit triode To control the current of LED to ensure the stability of LED brightness. 3. Protection circuit: constant current triode It can also be used to protect the circuit, such as adding constant current to the power supply triode To limit the output current to protect the load and power supply. 4. Select appropriate resistance value: when using constant current triode Hour

triode It is a common electronic component whose main function is to amplify or control the current. triode It is composed of three regions, namely, the transmitting region, the base region and the collecting region. Structurally, triode The central area of is the base area, and the two sides are the emission area and the collector area. triode The parameter indexes of include gain, maximum dissipated power, maximum voltage, maximum current, etc., which will be described in detail below triode The parameter index and structure principle of. I triode Structure principle of triode It is a 74HC595D semiconductor device, that is, its conductivity is between conductor and insulator. triode It consists of two PN junctions, one of which is the transmitting junction, the other is the collector junction, and the middle region is the base region. When triode In the normal working state, the forward bias voltage between the emitter junction and the base region makes a few carriers in the base region inject into the emitter junction, and these carriers enter the collector region after passing through the emitter junction, thus forming a collector current. Therefore, triode Its main function is to amplify or control the current. II triode Parameter index gain of (hFE) triode The gain of (hFE) refers to the ratio of collector current to base current, that is, the ratio of output current to input current. The higher the gain, the greater the ratio of output current to input current, and the better the amplification effect. triode The gain of different models is generally between tens and thousands triode The gain value is also different. Maximum Dissipated Power (PD) Maximum Dissipated Power means triode The maximum power that can be withstood under long-term working condition is generally expressed in Watts (W). If the maximum dissipated power is exceeded, it may cause triode Burning or even damage. Therefore, select triode Pay attention to its maximum dissipation power. Maximum voltage (VCEO) Maximum voltage refers to triode The maximum voltage that can be withstood during operation is generally expressed in volts (V). If the maximum voltage is exceeded, it may cause triode Breakdown, or even damage. Therefore, select triode Pay attention to the maximum voltage. Maximum current (IC) Maximum current refers to triode The maximum current that can be withstood during operation is generally expressed in ampere (A). If the maximum current is exceeded,

triode Amplification circuit common base amplification circuit common collection amplification circuit triode Or the amplification circuit of FET (the amplification circuit mentioned in this article refers to voltage amplification) will not be unfamiliar. This is the key point in analog electricity, but it is also a difficult point. I know it is very important, but I don't understand what is going on. It's OK to take triode The three configurations of the amplification circuit are taken as examples to briefly explain the calculation formula of the amplification factor of the amplification circuit. triode The basic configuration amplifier circuit can be divided into three types, namely common radiation amplifier circuit, common base amplifier circuit and common collection amplifier circuit. 1. The circuit schematic diagram of common radiation amplification circuit is as follows: ①. The amplification factor is A=- RC/Re. Design the value of Rc and Re according to the demand. ② Input impedance: Zin=beta * Re. (R1 and R2 are triode The bias voltage is provided. It is ignored here, but it should be considered in practice. Due to the circuit amplification characteristics of the three-level transistor, when Re is converted to the input end, it needs to be amplified by beta times, so the input impedance is high. ③ Output impedance: Zout=Rc. In order to reduce the current of the three-level transistor and reduce the power consumption, Rc generally takes a large value. ④ Frequency characteristic: due to Miller effect, triode The parasitic capacitance between the base electrode and the collector electrode will expand by A times in the amplification area and react to the input terminal, so the frequency characteristic is poor and the high-frequency signal cannot be amplified. 2. Common amplifier circuit The input resistance of the common amplifier circuit is very large, and the output resistance is very small, but it has only the current amplification ability, no voltage amplification ability, generally close to but less than 1. The AC path of the common amplifier circuit is as follows. At first glance, it feels very similar to the common amplifier circuit with no resistance at the emitter. The difference is that the position of the AC ground is different. I can compare it to make it easier to distinguish. The formula of AC magnification is: it can also be seen from the formula that the voltage magnification cannot be greater than 1, usually 1+ β It is very large. Add a large resistance Re ', so the result is close to 1. In this formula, only one Re 'is different from the above two amplification circuit formulas. Its value is equal to Re and R L, and the meaning represented by other letters is

BS170 parameters: transistor type: MOSFET control channel type: N-channel maximum power consumption (Pd): 0.83 W. maximum drain source voltage | Vds |: 60 V. maximum gate source voltage | Vgs |: 20 V. maximum gate threshold voltage | Vgs (th) |: 3 V. maximum drain current | Id |: 0.5 A. maximum junction temperature (Tj): 150 ° C maximum drain source on resistance (Rds): 5 Ω BS170 data sheet (PDF) SEM1ONDUCTOR technical data is provided by BS170/D TMOS FET switch N Channel enhanced BS170 1 DRAIN 2 GATE? 3 Source Maximum Rating 1 2 Rating Symbol Value Unit 3 Drain Supply Voltage VDS 60 VdcCASE 29 04, Model 30 Grid Supply Voltage TO 92 (TO 226AA) Continuous VGS 20Vdc Non Repetitive (tp? 50 s) VGSM 40Vpk Drain Current (1) ID 0.5 Adc Discrete Semiconductor Data Sheet BS170 N-Channel Vertical D-MOS Transistor April 1995 Product Specification Document Discrete Semiconductor, SC13b Philips semiconductor product specification N-channel vertical D-MOS transistor BS170 describes fast reference data N-channel enhanced mode drain source voltage VDS maximum. TO-92 gate source voltage is 60 V vertical D-MOS transistor BS170/MMBF170 N-channel enhanced mode field-effect transistor overview characteristics These N-channel enhanced mode field-effect high-density cell designs are suitable for low RDS (ON). Transistors are produced using the proprietary high voltage controlled small signal switch of Fairchild Semiconductor. Cell density, DMOS technology. These products are designed to minimize the impact on state BS170/MMBF170 N-channel enhanced mode field-effect transistors Overview characteristics These N-channel enhanced mode field-effect high-density cell designs are suitable for low RDS (ON). Transistor adopts Fairchild semiconducting

This is unified by the International Semiconductor Federation triode Nomenclature: B represents silicon material; U refers to high-power switch tube. 508 is the product registration number (indicating its parameters at the same time); A is his level code (same model triode , a parameter is differentiated by grades). In short, triode There are various naming methods, including domestic ones, European and American ones. Japan and so on. At present, Japan is the most widely used, Europe and the United States are less, and domestic ones are even less. Category: Split semiconductor product family: transistor (BJT) - single circuit transistor type: NPN current collector (Ic) (maximum): 8A voltage collector emitter breakdown (maximum): 700V Ib, Vce saturation under Ic conditions (maximum): 1V @ 2A, 4.5A current collector cutoff (maximum): 1mA minimum DC current gain (hFE) at a certain Ic, Vce : - Power - Maximum: 125W Frequency - Conversion: 7MHz Installation type: Through hole transistor polarity: NPN Power consumption (Pd): 125 Collector - Base breakdown voltage (Ucb): 1500 Collector - Emitter breakdown voltage (Uce): 700 Emitter - Base breakdown voltage (Ueb): 0 Maximum collector current (Ic): 8 Maximum operating temperature (Tj), ° C: 150 Maximum operating frequency (ft): 7 Output capacitance (Cc), PF: 125 DC current gain (hfe): 10 transistor package type: TOP3

In the circuit, triode It is a commonly used semiconductor device, mainly used for amplification, switching, voltage stabilization, signal modulation and other functions. triode There are different types, which can be mainly divided into bipolar type according to different structures and working principles triode (BJT) and field effects triode （FET）。 bipolar triode (BJT) has two types: NPN type and PNP type. BJT consists of two PN junctions. The N or P type semiconductor in the middle is called the base, and the P or N type semiconductor on both sides is called the emitter and collector respectively. In NPN type triode The current flows from the collector to the emitter; In PNP type triode In, the current is in the opposite direction. field effect triode (FET) also has several different types, including junction field effect transistor (JFET) and insulated gate field effect transistor (MOSFET), in which MOSFET is divided into N-channel and P-channel types. The FET uses a control voltage to regulate the current through the semiconductor channel. In the analysis circuit triode We can start from the following aspects: 1. Identification triode Type: first, you need to determine which type is used in the circuit triode , BJT or FET, NPN or PNP, N-channel or P-channel MOSFET. 2. Check the bias mode: for BJT, it is necessary to analyze the bias between the base, emitter and collector, that is, the relationship between the base voltage and the emitter voltage (V_BE), and between the collector voltage and the base voltage (V_CB); For FET, you need to check the relationship between grid voltage and source voltage (V_GS) and drain voltage and source voltage (V_DS). 3. Determine the working area: for BJT, it is necessary to determine whether it is in the cut-off area, saturation area or amplification area; For FET, it is necessary to determine whether it is in the cut-off region, ohmic region or saturated region (also known as active region). 4. Analyzing circuit configurations: identifying triode Configuration in the circuit, such as common emitter amplifier, common collector amplifier (BC848BWT1G emitter follower), common base amplifier, etc., each configuration has its own specific

crystal triode , also known as transistor, is a semiconductor component used to amplify current, switch and process signals. crystal triode Its main structure includes P-type semiconductor, N-type semiconductor and N-type or P-type semiconductor sandwiched in the middle, which are called emitter, base and collector respectively. Next is crystal triode The structure, function and working principle of triode Structure of: 1 Emitter: It is a pole connected with external input signals, usually an N-type semiconductor. 2. Base: It controls the on and off of the transistor. It is the control electrode of the CS4236B-KQ transistor, usually a P-type semiconductor. 3. Collector: transistor output terminal, usually N-type semiconductor. 2、 Crystal triode Role of: 1 Amplified current: by controlling the base current, the current from the input signal to the output terminal can be amplified to achieve the function of signal amplification. 2. Switch: crystal triode It can realize the switch function and control whether a circuit is on or off. 3. Signal processing: crystal triode It can be used for signal processing in analog electronic equipment, such as modulation and demodulation, frequency modulation, etc. 3、 Crystal triode Working principle of: 1 Amplification: When a forward voltage is applied to the base, a current flow will be formed between the emitter and the base to control the current amplification of the collector. 2. Switching function: when the forward voltage of enough high is applied to the base, the crystal triode When entering the saturation zone, it is fully connected; When the base voltage is low, the crystal triode When entering the cut-off area, there is no conduction. To sum up, crystal triode It is an important semiconductor device with simple structure, but has many functions, including amplification, switching and signal processing. By controlling the base current, the input signal can be regulated and amplified, which is widely used in all aspects of the electronic field.

triode It is a semiconductor device with three alternating layers of p-type and n-type semiconductor materials, hence the name“ triode ”。 The three layers are emitter, base and collector. stay triode The emitter and collector are the main current carrying areas, while the base is a very thin intermediate layer, which mainly controls the current between the emitter and collector. triode There are two main types: NPN and PNP. Their difference lies in the arrangement of semiconductor materials and the type of doping. Whatever the type, triode They all have three parts: emitter, base, and collector. Under normal operating conditions, the voltage from base to emitter will make AD9979BCPZ triode Conduction, allowing current to flow from emitter to collector. Understanding why triode Before it can be used as a temperature sensor, we need to understand triode Working principle of. stay triode When the emitter has a forward voltage to the base, the carriers in the emitter (electrons in n-type semiconductors, holes in p-type semiconductors) will be injected into the base, and then flow out through the collector. This base controls the emitter and collector currents so that triode It can be used as amplifier and switch. And in triode As a temperature sensor, it mainly uses a basic characteristic of semiconductor materials, that is, its conductivity (or resistance) is related to temperature. With the increase of temperature, the thermally activated carriers in semiconductors will increase, thus increasing their conductivity. stay triode The ratio of base current to emitter current（ β Value or magnification) will also increase with the increase of temperature. Therefore, by measuring the change of this ratio, we can obtain the measurement of temperature. Specifically, triode The working process of the temperature sensor is as follows: First, set the triode Connected with a constant current source triode The current of remains unchanged. Then, measure triode The change of base emitter voltage (VBE). Because VBE and β Value, and β The value is also related to temperature, so the change of VBE can

photoelectricity triode It is a kind of light detection device based on semiconductor materials, also called photodiode. It is often used in photoelectric conversion, optical signal detection, photoelectric amplification and other applications. Functionally, photoelectric triode Compared with ordinary DMP3056LSD-13 diode, it has higher light detection efficiency, faster response speed and better frequency characteristics. photoelectricity triode Its basic characteristics mainly include the following aspects: 1 Photocurrent sensitivity: photoelectric triode It is highly sensitive to the response of optical signal and can convert optical signal into current output. 2. Frequency characteristic: photoelectric triode It has good frequency characteristics, can realize high-speed optical signal conversion, and can adapt to signals in different frequency ranges. 3. Response time: photoelectric triode It has fast response time and can quickly convert optical signals into electrical signals, which is suitable for application scenarios with strict time requirements. 4. Linearity: within a certain working range, photoelectric triode There is a linear relationship between the output and the input light intensity, which has good signal amplification characteristics. For photoelectric triode Generally, the following steps can be used: 1 Photocurrent test: by connecting a proper circuit triode When exposed to the light source, measure its output photocurrent to evaluate its sensitivity and linearity. 2. Frequency characteristic: observe photoelectric by changing the frequency of input signal triode To evaluate its frequency characteristics and bandwidth. 3. Response time test: use oscilloscope and other equipment to give optoelectronic triode Input the pulse light signal, observe the response time of its output signal, and evaluate its response speed and dynamic characteristics. 4. Environment adaptation test: test photoelectric triode The performance under different environmental conditions, such as the influence of light intensity, temperature, humidity and other factors on its performance. Through the above test methods, we can fully understand photoelectric triode All the performance indexes of the system can provide reference for its selection and optimization in practical application.

MOS tube, fully called Metal Oxide Semiconductor Field Effect Transistor, is a kind of field effect tube, named after the three-layer structure of metal, oxide and semiconductor. There are two types of MOS tubes: n-channel MOS tubes (NMOS) and p-channel MOS tubes (PMOS). According to these two types, MOS tubes can be further divided into enhanced and depleted types. The main characteristics of MOS transistor are high input impedance, low power consumption, small size, high operating frequency and strong radiation resistance, so it is widely used in integrated circuit design. Especially in digital logic circuits, analog circuits, memory circuits and power electronic circuits, MOS transistors have important applications. However, when MOS tube is used in design, it should be noted that due to its working principle, it is better than BQ24031RHLR triode It is more vulnerable to static electricity and overvoltage. The gate of MOS tube is isolated from the source and drain through an insulated silicon oxide layer. This insulation layer is extremely thin, so it can be easily broken down by high voltage. In practical applications, MOS transistors are easy to burn out in the design of switching circuits without proper protective measures. Used in MOS switch circuit design triode The main reasons for easy burning are as follows: 1 Insufficient current drive capacity: triode When connected to the output end of MOS tube, it may not be able to provide enough current to drive the load, resulting in triode Burn out due to overload. 2. Transient over-voltage/over-current: During the switching process of MOS tube, the voltage and current at the output terminal may fluctuate instantaneously, triode It is unable to withstand these overvoltage or overcurrent and is easy to be damaged. 3. Insufficient reverse breakdown protection: In MOS switch circuit, the output end often needs reverse breakdown protection to avoid damage triode The reverse breakdown capacity of may be insufficient, resulting in damage. To solve the problem of MOS switch circuit design triode The problem of easy burning can be solved

triode Drive relay circuit is a common and feasible circuit scheme. As an electrical control element, EPF81188AQC240-2 relay is often used to convert low power signal into a control device with high power current carrying. and triode As a semiconductor device, it has the characteristics of current amplification, switch control, etc., and can provide sufficient driving current to control the operation of the relay. triode The principle of driving relay circuit is that triode To control the working state of the relay. When triode The input current is low level, triode In the off state, the conduction current is small, and the relay is in the off state; When triode The input current is high level, triode In the saturation state, the conduction current increases and the relay is closed. By controlling triode The input current can realize the switch control of the relay. use triode The advantages of driving relay circuit include: 1. Wide application range: triode The drive relay circuit can be applied to different types of relays, including low-power and high-power relays. 2. Strong driving ability: triode Sufficient current and voltage can be provided to control the relay to ensure reliable switching operation. 3. High reliability: compared with the direct use of control signals to control relays triode The driving relay can provide more stable and reliable control signal, and reduce misoperation and interference. 4. Cost saving: because the work of relays usually requires large current and voltage, it may be necessary to add external components to directly use low-power devices such as microcontrollers to drive relays triode The driving relay circuit can reduce the demand for external components and reduce the cost. However, in the design triode When driving the relay circuit, attention should also be paid to the following aspects: 1. Input signal level adaptation: according to the drive requirements and triode It is necessary to ensure that the input signal level can be correctly positioned triode Cut off and saturation states to achieve accurate relay control. 2. Output load matching: the load characteristics of the relay shall be consistent with triode To make full use of triode Provide the drive capability while avoiding problems such as overload or overheating. 3. Power supply stability: stable power supply

triode And relay are two different electronic components, and they are obviously different in working principle, application range and performance characteristics. first, triode It is a semiconductor device consisting of three control electrodes (base, emitter and collector). It controls the current amplification or switching action in the output circuit according to the input current or voltage signal. triode It is often used in analog circuits as an amplifier, FDN5618P regulator, switch and other functions. It has high frequency response, small size, low power consumption and other characteristics, and is widely used in electronic equipment. A relay is an electromagnetic device consisting of coils and contacts. When the coil is energized, the generated magnetic field attracts the contact to close or open, thus realizing the signal conversion or circuit control. The relay has large current and voltage capacity and can isolate high voltage and low voltage circuits. It is commonly used in power systems, automation equipment, motor control and other fields. by comparison, triode The working speed in the circuit is faster and can achieve higher frequency response; However, due to the limitation of mechanical components, the relay usually works slowly and cannot meet the requirements of high frequency response. In addition, triode Often used as an active device, it needs external power supply and is subject to its working area; As a passive device, the relay does not need external power supply, and can still maintain the output state when the input signal is disconnected or open circuit. Although the relay and triode Both can be used to realize signal conversion or amplification, but they are significantly different in the following aspects: 1. Working speed: triode Due to the use of semiconductor technology, it has fast switching speed and response time, and is suitable for high frequency electronic applications. However, due to the existence of mechanical contacts, the relay operates slowly and is suitable for relatively low frequency applications. 2. Power handling capacity: the relay can handle higher voltage and current, suitable for high-power switching applications. and triode Its power processing capacity is relatively small, and it is usually suitable for low-power electronic equipment. 3. Reliability: because the relay adopts mechanical contact, its service life is limited, and it is vulnerable to vibration and overload. With the increase of service time, failure may occur. and triode Since there is no mechanical movement part

triode It is a semiconductor device with three pins, usually including emitter (E), base (B) and collector (C). It can amplify signals and play the role of switch. It is a very important component in the circuit. If triode If one of its feet is broken, it will not work properly as triode Used. However, in some cases, if the collector or emitter is disconnected, sometimes the triode Used as FM25V10-G diode. Diode is a semiconductor device with only two pins, which has single conductivity. Its two pins are anode (A) and cathode (K). When the forward bias voltage is applied, the diode is on; When reverse bias voltage is applied, the diode is cut off. The main function of diode is rectification, that is to convert alternating current into direct current, and it is also used for signal detection, amplitude limiting, voltage stabilization, etc. if triode If the base (B) or emitter (E) of is broken, but the PN junction between the collector (C) and emitter (E) is still intact, then this triode To some extent, it can be used as a diode. Because in triode There is a PN junction between collector (C) and emitter (E), which is similar to the structure of diode. In this case, the collector can be used as the anode of the diode and the emitter as the cathode of the diode. However, the efficiency and performance of the diode used in this way will not be the same as that of the original diode, because triode The design and materials of triode Function. If the collector (C) is broken, it is usually impossible to triode It is used as a diode because the collector is triode There is no collector in the main carrier collection area of, triode The main functional area of. It should be noted that this practice is not recommended because triode As a diode, it has low efficiency and is easy to be damaged. In practical applications, if diodes are needed, the best practice is to use special diodes to ensure the reliability and performance of the circuit. When considering the use of damaged triode Before being used as a diode, the following points should also be considered: 1 triode Its structure and material may not be suitable for long time operation as a diode. 2、 triode The maximum forward current and reverse withstand voltage of may be different from the diode specification

triode It is an important electronic device with functions of amplification, switching and voltage stabilization. It is composed of three control electrodes, namely base (B), emitter (E) and collector (C). triode According to the different working modes, it can be divided into two types: NPN type and PNP type. In this article, we will introduce triode Methods of use and relevant specifications. I triode Basic principles of triode Its working principle is based on the conductivity control of PN junction. When a forward bias voltage is applied to one side of the PN junction, the junction will be turned on and current can flow through. Under reverse bias, the PN junction will be cut off and current cannot pass. triode By controlling the current, the control electrode (base) of the PN junction can adjust the conduction and cut-off state of the PN junction, thus realizing the functions of amplification, switching and voltage stabilization. II triode Magnification function of triode The signal can be amplified by connecting the input signal to the base and obtaining the output signal from the collector. When the input signal is a small signal, by controlling the change of current, triode The amplitude of the signal can be amplified. This amplification function is very important in applications such as audio amplification, RF signal amplification and power amplification. III triode Switch function of triode It can also be used as a switch. When triode When it is in the cut-off state, the current cannot pass through and the switch can be disconnected. And when triode In the conduction state, the current can flow and the switch can be closed. This switching function is widely used in digital circuits to control the switching state of circuits. IV triode Voltage stabilization function of triode It can also be used as a voltage regulator to achieve voltage stability by adjusting the base current. When the input voltage changes, triode The output voltage can be automatically adjusted to maintain stability. This voltage stabilizing function is very important in power supply and voltage regulation. V triode The use specification of is in use triode Pay attention to the following specifications: 1. Correct polarity connection: triode There are positive and negative polarities, which need to be correctly connected to the circuit. NPN type triode The emitter of is connected to the negative pole, PNP type triode The emitter of is connected to the positive pole. 2. Appropriate voltage and current: triode It needs to work within the specified voltage and current range.

Thyristor is a semiconductor device, which is widely used in the electronic field due to its unique electrical characteristics and wide application fields. Although the thyristor and triode There are some similarities in appearance, but there are obvious differences in the application of the two in the circuit. The following are some different applications of MAX485CPA thyristor in the circuit: 1. Switch application: thyristor is a bistable device, which can withstand a high reverse voltage in the off state and a low voltage drop in the on state. This makes thyristors very useful in high voltage and high current switching applications. Thyristors can be used as control switches for high-voltage AC power supply, such as motor drive, power system control, etc. 2. AC voltage control: the conduction state of the thyristor can be achieved through a trigger pulse. Once triggered, the thyristor will remain in the conduction state until the current drops below its holding current (continuous current) level. With this feature, the thyristor can be used as an AC voltage controller. By adjusting the time and width of the trigger pulse, the conduction angle of the thyristor can be controlled, thus controlling the size of the AC voltage. 3. AC voltage frequency conversion: thyristor can be used for AC voltage frequency conversion control. The frequency and magnitude of AC voltage can be changed by controlling the conduction angle and time of thyristor. This is very useful in many applications, such as speed control of AC motor, reactive power compensation of AC power supply, etc. 4. DC power control: thyristor can be used as the controller of DC power supply. The output voltage of DC power supply can be adjusted by controlling the conduction angle and time of thyristor. This is very useful in applications requiring precise control of DC power output, such as electric welding machines, electroplating equipment, etc. 5. Inverter: thyristor inverter is a device that converts DC power to AC power. By controlling the conduction angle and time of thyristor, the conversion from DC power supply to AC power supply can be realized. Inverters are widely used in renewable energy systems such as solar panels and wind turbines. To sum up, thyristor and triode Although similar in appearance, there are great differences in working principle and application fields. Thyristors are mainly used for high voltage

Diodes and triode L6562D is a common semiconductor device, which plays an important role in electronic circuits. triode There are three pins, namely base, emitter and collector, while the diode has only two pins, namely positive (anode) and negative (cathode). Under normal circumstances, triode All pins of must work properly to function properly. However, if triode It is a problem whether a broken pin can be used as a diode. 1. Basic working principle of diode: diode is composed of P-type semiconductor and N-type semiconductor. Impurity atoms in P-type semiconductors contain trivalent electrons, while those in N-type semiconductors contain pentavalent electrons. When the P-type semiconductor contacts the N-type semiconductor, a PN junction will be formed between them. In the equilibrium state, the impurity ions on both sides of the PN junction will diffuse to the opposite region, forming an electric field, which is called the built-in electric field. The built-in electric field will prevent the diffusion of electrons from the N-type area to the P-type area, but allows the diffusion of holes from the P-type area to the N-type area. When the diode is in a positive bias, that is, the P-type area is connected with a positive voltage, and the N-type area is connected with a negative voltage, the holes will diffuse from the P-type area to the N-type area, while the electrons are blocked by the built-in electric field and cannot diffuse from the N-type area to the P-type area. This results in a net positive charge area in the P-type area and a net negative charge area in the N-type area, forming a potential difference. This potential difference causes electrons to flow from the P-type region to the N-type region, forming a current. In this case, the diode is on. When the diode is in reverse bias, that is, the P-type area is connected with negative voltage, and the N-type area is connected with positive voltage, the built-in electric field will be strengthened, preventing the hole from diffusing from the P-type area to the N-type area. At this time, almost no current passes through the diode and is in the cut-off state. 2、 triode Basic working principle of triode It is composed of three different doped semiconductor regions, namely emitter, base and collector. PN junction is between emitter and base, and PN junction is between collector and base. When triode In the normal working state, a forward voltage is applied between the emitter and the base,

lm2903dgkr triode It is a semiconductor device that can amplify in the circuit. Its amplification is realized by controlling the base current to control the change of collector current. stay triode In, the base, emitter and collector are three electrode pins, which respectively correspond to three regions: P-type region (base region), N-type region (emission region) and P-type region (collector region). triode The amplification effect of can be explained by the following steps: 1. Form PNP or NPN structure: triode The basic structure of is composed of two PN structures. PNP type triode It is composed of an N-type semiconductor sandwiched between two P-type semiconductors, while the NPN type triode It is composed of a P-type semiconductor sandwiched between two N-type semiconductors. This structure makes triode It has bidirectional conductivity. 2. Bias circuit: To make triode For normal operation, appropriate voltage shall be applied between base emitter and base collector. These voltages are usually supplied through bias circuits. The function of the bias circuit is to make triode It is in the magnification area, that is, at the working point on its characteristic curve. 3. Input signal: The input signal of the amplification circuit is usually an AC signal, which can be sound, image or other waveforms. This signal is connected to triode As the input signal. 4. Base current change: When the input signal is applied to the base, the base current will change. This is because the change of the input signal will change the forward bias of the base emitter diode, thus changing the base current. 5. Amplification effect: the change of base current will lead to the change of emitter current, and then affect the collector current. because triode In the amplification region, small changes in base current can lead to large changes in collector current. This effect makes triode The input signal can be amplified. 6. Output signal: the change of collector current can be connected to the load resistance to form an amplified output signal. The amplitude of the output signal is usually much larger than the input signal, thus realizing the amplification of the AC signal. To sum up, triode The amplification effect of is realized by controlling the base current to control the change of collector current. The change of input signal will cause base current

The bias resistor is used for triode An important element in the circuit, which is used to stabilize triode To make it work normally. triode It is an electronic device, commonly used in amplification circuit and switching circuit. To make ATMEGA2560-16AU triode If it can work normally, it needs to be biased, that is, to provide it with a suitable working point so that it can work normally in the amplification or switching state. The bias resistor is used to achieve this purpose. Specifically, the function of the bias resistor is as follows: 1. Determine the operating point: the bias resistor determines the triode The working point of, that is, the current and voltage value under DC working state. Selection of work points for triode The amplification or switching characteristics of are critical. 2. Stable operating point: bias resistance can make triode The operating point of is relatively stable, that is, within a certain range, when the temperature, power supply voltage and other factors change, triode The working point of can still be kept in a proper position, and will not fail or work abnormally due to changes in external conditions. 3. Improve linearity: bias resistance can help adjust triode The current amplification coefficient of the circuit can be improved. Linearity refers to whether the relationship between input and output is linear. With proper bias resistance triode The output signal shows linear amplification within a certain input range. Why? triode What about adding bias resistance? triode It is a nonlinear element, and its operating point is uncertain without bias resistance. This means that under different temperature, power supply voltage and other conditions, triode The operating point of may change, which may lead to unstable or abnormal operation of the circuit. By adding bias resistance triode The working point of is relatively stable, improving the reliability and stability of the circuit. The bias resistance can be determined according to triode Parameters and working requirements to ensure triode Normal operation. In addition, the bias resistor can also help adjust triode The current amplification coefficient of the circuit can be improved. Linearity is very important for both amplification circuits and switching circuits, because it determines the precise relationship between input and output signals. In short, partial

1、 Diode diode is a semiconductor device, which is one of the most common devices in electronics. It consists of p-type semiconductor and n-type semiconductor, and has single conductivity, that is, it can only be turned on under forward voltage, and turned off under reverse voltage. There are many kinds of diodes, including ordinary diodes, BQ24040DSQR Schottky diodes, light-emitting diodes, etc. 1. Common diode Common diode, also known as rectifier diode, is one of the most common diodes. Its main function is to convert alternating current into direct current, and it can also be used for signal detection, voltage stability and other aspects. Generally, the forward working voltage of common diode is 0.6-0.7V, and the reverse breakdown voltage is about 50-100V. 2. Schottky diode Schottky diode is a special diode, which consists of an n-type semiconductor and a metal. Schottky diodes have the characteristics of low forward voltage drop and fast recovery speed, and are commonly used in high-frequency circuits, high-speed switches and other fields. 3. Light emitting diode Light emitting diode is a device that can convert electric energy into light energy. It is commonly used in indicator light, nixie tube, display screen, etc. The working principle of LED is similar to that of ordinary diode, but its structure and materials are different. The color and brightness of light emitting diodes depend on their semiconductor materials and doping types. II triode triode Also called crystal triode , is a semiconductor device, which consists of three regions of a transistor, namely, the emission region, the base region, and the collector region. triode It has multiple functions such as amplification, switching, voltage stabilization, etc., and is widely used in various electronic devices. 1. Magnification triode One of its most important functions is to amplify the collector current by dozens or even hundreds of times by controlling the base current. triode The magnification of depends on its working state, load resistance and other factors. 2. Switch action triode Its switching function is to convert the input signal into the output signal, which is often used in low-frequency switching circuits, timers and other aspects. In the switch state, triode The collector current of can reach several hundred milliamperes or even several amperes, so triode Also called "electronic switch". 3. Pressure stabilizing effect triode It can also be used as a voltage regulator to control the collection through the base voltage

switch triode EPM240T100C5N is a common semiconductor device with switching function, which can be used to control the current and voltage in the circuit. It is a three terminal device, including an emitter, a base and a collector. By controlling the base current, the circuit between collectors can be opened and closed. switch triode It is widely used in power management, motor control, circuit protection and other fields. switch triode Operating principle of: switch triode Its working principle is based on the conductive characteristics of PN junction. When the base is positively biased, current can flow into the base. This current is weak, but enough to form a hole well and an electron well at the PN junction, so that the hole flows from the base to the collector, and the electron flows from the emitter to the collector. Therefore, when the base current is large enough, the circuit between collectors will be connected to realize the switching function. switch triode Applications of: power management: switches triode It can be used in the power management circuit to control the output voltage and current of the power supply. For example, by switching triode Control the output voltage of the power supply to protect the load circuit. Motor control: switch triode It can be used in the motor control circuit to control the switch and speed of the motor. For example, by switching triode Control the speed of the motor to realize the forward and reverse rotation and speed regulation of the motor. Circuit protection: switch triode It can be used in the circuit protection circuit to protect the circuit from the damage of overcurrent and overvoltage. For example, by switching triode Control the current and voltage of the circuit to achieve circuit protection. LED control: switch triode It can be used in LED control circuit to control LED brightness and flicker. For example, by switching triode Control the current of LED to realize the brightness adjustment and flashing effect of LED. In short, the switch triode It is a powerful semiconductor device, widely used in power management, motor control, circuit protection and other fields. In practical applications, appropriate switches need to be selected according to specific needs triode Model, combined with other devices to form a complete circuit.

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

WAYON VDMOS series can significantly reduce on resistance and ultra-low gate charge, which is suitable for applications requiring high power density and high efficiency. Its product specifications range from 500 volts to 1500 volts. It is widely and stably used in SMPS, chargers, DC-DC and other products. It is very stable and RoHS compliant. Reset Shanghai Changyuan Wei'an/Shenzhen Lianda Electronics Co., Ltd. (general agent) Liao Xuehua: Tel: 13670166496 QQ1046342124 WeChat: 13670166496 (Guangdong Office) Address: Room 1005, Block B, Liyuan Building, Minzhi Bulong Road, Longhua District, Shenzhen WR1117A-50A70RGDTN2RS5-90WMO07N60C2WMO07N65C2WMK07N65C2WMK09N60C2WMK09N65C2WML09N65C2WML09N70C2WML10N65C2WMF10N65C2 WMP11N70C2 WML11N50C2WMM14N65C2WMO20N65C2WMK26N60C2WML07N65C2WMK20N65C2WML11N60C2WMO15N10T1 WML10N70EM WMK340N20HG2WMR09N02T1 WML26N65SRWML10N70C4 W M06N30MWML18N50C4  WML16N60FDWMK099N10LG2WML80R480SWMK043N10HGDWMK043N10HGDWMK040N08HGSWMK040N08HGSWMO05N80M3WMK053NV8HGSWMK060N10LGSWMK060N10LGSWML06N80M3WML0

Shanghai Changyuan Wei'an/Shenzhen Lianda Electronics Co., Ltd. (general agent) Liao Xuehua: Tel: 13670166496 QQ1046342124 WeChat: 13670166496 (Guangdong Office) Address: Room 1005, Liyuan Building B, Minzhi Bulong Road, Longhua District, Shenzhen Changyuan Wei'an, a domestic listed company, has Infineon's technology, good heat dissipation, low internal resistance, and good temperature rise, One of the most influential MOS manufacturers in China with high cost performance ratio 1. Small on state impedance and low on state loss. Since the Rdson of SJ-MOS is far lower than that of VDMOS, the turn-on loss of SJ-MOS in system power products must be much lower than that of VDMOS. It greatly improves the conduction loss of the single MOSFET on the system product and improves the efficiency of the system product. This advantage of SJ-MOS is particularly prominent in high-power and high current power supply products. The package is small under the same power specification, which is conducive to the improvement of power density. First of all, under the same current and voltage specifications, the crystal source area of SJ-MOS should be smaller than that of VDMOS process. As a MOS manufacturer, products of the same specification can be packaged into smaller products, which is conducive to improving the power density of the power supply system. Secondly, the reduction of SJ-MOS conduction loss reduces the loss of power supply products, because these losses are dissipated in the form of heat. In practice, we often add radiators to reduce the temperature rise of MOS monomer to ensure that it is within the appropriate temperature range. Because SJ-MOS can effectively reduce the heat generation and the size of the radiator, for some power supplies with lower power, the radiator can be completely removed even after using SJ-MOS. It effectively improves the power density of system power supply products. The gate charge is small, and the driving ability of the circuit is reduced. The gate charge of traditional VDMOS is relatively large, and we often encounter the problem of temperature rise caused by insufficient driving ability of IC in practical application. In order to increase the driving ability of IC in circuit design of some products and ensure the fast speed of MOSFET

Shenzhen Lianda Industrial Co., Ltd. is an agent specialized in providing core electronic parts for new energy products. It not only provides key semiconductor devices including various IGBTs, MOSFETs, fast diodes, rectifier bridges, silicon controlled rectifier, silicon carbide diodes, field effect transistors and control ICs, but also provides film capacitors, aluminum electrolytic capacitors Current sensors, filters and other products can provide key components for each link of power conversion. We have a professional sales engineer team, which can provide customers with correct, efficient and economical component solutions, so that customers' design is at the forefront of the industry. In the fields of communication power supply, UPS, power supply, frequency converter, electric welding machine, wind energy, solar energy, SVG, etc., we have mature and leading component solutions, which can effectively reduce the time for engineers to select original components and shorten the product development cycle. One of our advantages is that there are many products and sufficient stock. Whether multinational enterprises or domestic manufacturers, they can get our fast, reliable and professional services. [Commitment]: Our products are 100% genuine and environmentally friendly! More discounts!!! Miss Liao: 13670166496 WeChat ID: 13670166496 QQ: 1046342124 Address: Room 2706, Block A, Guoli Building, Zhonghang Road, Futian District, Shenzhen WT2222ASOT-23NPN0.30.6754062003001mA/5V0.3150mA/15mAWT2712SOT-23NPN0.150.156050520040002mA/6V0.25100mA/10mAWT3904SOT-23NPN0.2350.26040610010mA/1V0.350mA/5mAWT5551SOT-23NPN0.30.61801606100200

Address: 2101, Block A, Jiahe Huaqiang Building, Futian District, Shenzhen, China, mainly engaged in integrated chip II triode , professional factory order matching scope: integrated circuit IC II triode Capacitance, resistance, inductance, crystal oscillator, LED universal board, pin array, bus connector connector, XH, VH, PH series micro switch, key switch, FPC soft cable, DC socket, USB Dupont cable and other electronic component materials, Shenzhen Yatai Yingke Electronics Co., Ltd., in line with the principle of "customer first", and with the goal of "bringing maximum benefits to customers", provides customers with the highest quality Products and after-sales services with the most competitive price. If you are also looking for qualified suppliers in the field of electronic components, Shenzhen Yatai Yingke Electronics Co., Ltd. will be your best choice! Shenzhen Yatai Yingke Electronics Co., Ltd., relying on the global procurement network and rich industry experience, provides customers with fast information, reliable quality standards and competitive prices, one-stop convenient procurement, flexible solutions, and has become a spot partner approved by many well-known enterprises at home and abroad, and has won good reputation and achievements in the industry, It was rated as "the best independent distributor with continuous supply capability in China" by 114. com International Electronic Commerce. Shenzhen Yatai Yingke Electronics Co., Ltd. previously distributed more than 30000 brand components, covering integrated chips, capacitors, resistors, transistors, diodes triode , connectors, etc., specializing in the supply of materials in short supply, production suspension, hot spots, etc., and the fields served include photoelectric projection, computer and network equipment, mobile communication, automotive electronics, consumer electronics, medical devices, precision instruments, control

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

1、 S6613D/S6614D is a series of high-precision primary side feedback LED constant current control switch chips. The isolated flyback LED constant current power supply is suitable for 85Vac-265Vac full range input voltage and works in the discontinuous mode of inductance current. High voltage power is integrated inside S6613D/S6614D chip triode No auxiliary winding detection and power supply is required; While simplifying the number of peripheral components of the overall scheme, the chip and the system itself have a high cost performance ratio. This chip has built-in line voltage compensation and high-precision current sampling. It can achieve high current accuracy without adding current compensation circuit. S6613D/S6614D integrates various protection functions internally: undervoltage locking, front edge blanking, LED open circuit protection, short circuit protection, overheat regulation and other functions, greatly increasing the stability of the system. The S6613D and S6614D are packaged in DIP-7. 2、 Main features * No need for auxiliary winding detection and power supply*

MMBT5550LT1G  triode ON Sammy Brand: ON Model: MMBT5550LT1G Package: SOT-23 Manufacturer: onsemi Product Type: Bipolar Transistor Bipolar Junction Transistor (BJT) RoHS: Yes Installation style: SMD/SMT package/box: SOT-23-3 transistor polarity: NPN configuration: Single collector emitter maximum voltage VCEO: 140 V collector base voltage VCBO: 160 V emitter base voltage VEBO: 6 V collector emitter saturation voltage: 250 mV maximum DC collector current: 600 mAPd power dissipation: 225 mW minimum operating temperature:- 55 C maximum operating temperature:+150 C series: MMBT5550L collector Continuous current: 600 mA DC collector/Base Gain hfe Min: 60 Height: 0.94 mm Length: 2.9 mm Width: 8 mg

MMBT3904LT1G triode ON/Ansemy Electronic Components Brand: ON Model: MMBT3904LT1G Package: SOT23 Manufacturer: onsemi Product Category: Bipolar Transistor Bipolar Junction Transistor (BJT) RoHS: Yes Installation style: SMD/SMT package/box: SOT-23-3 transistor polarity: NPN configuration: Single collector - emitter maximum voltage VCEO: 40 V collector - base voltage VCBO: 60 V emitter - base voltage VEBO: 6 V collector - emitter saturation voltage: 300 mV maximum DC collector current: 200 mAPd - power dissipation: 225 mW gain bandwidth product fT: 30 0 MHz minimum operating temperature: - 55 C maximum operating temperature:+150 C series: MMBT3904L collector continuous current: 0.2 A height: 0.94 mm length: 2.9 mm width: 30 mg

Address: 2101, Block A, Jiahe Huaqiang Building, Futian District, Shenzhen, China, mainly engaged in integrated chip II triode , professional factory order matching scope: integrated circuit IC II triode Capacitance, resistance, inductance, crystal oscillator, LED universal board, pin array, bus connector connector, XH, VH, PH series micro switch, key switch, FPC soft cable, DC socket, USB Dupont cable and other electronic component materials, Shenzhen Yatai Yingke Electronics Co., Ltd., in line with the principle of "customer first", and with the goal of "bringing maximum benefits to customers", provides customers with the highest quality Products and after-sales services with the most competitive price. If you are also looking for qualified suppliers in the field of electronic components, Shenzhen Yatai Yingke Electronics Co., Ltd. will be your best choice! Shenzhen Yatai Yingke Electronics Co., Ltd., relying on the global procurement network and rich industry experience, provides customers with fast information, reliable quality standards and competitive prices, one-stop convenient procurement, flexible solutions, and has become a spot partner approved by many well-known enterprises at home and abroad, and has won good reputation and achievements in the industry, It was rated as "the best independent distributor with continuous supply capability in China" by 114. com International Electronic Commerce. Shenzhen Yatai Yingke Electronics Co., Ltd. previously distributed more than 30000 brand components, covering integrated chips, capacitors, resistors, transistors, diodes triode , connectors, etc., specializing in the supply of materials in short supply, production suspension, hot spots, etc., and the fields served include photoelectric projection, computer and network equipment, mobile communication, automotive electronics, consumer electronics, medical devices, precision instruments, control

UP3855G UTC/Youshun PNP 140V 4A triode (BJT) Description: UTC UP3855 transistor saturation voltage decreases. It provides customers with very low on state losses, making it suitable for applications such as drive and power management functions and power circuits. Characterized by * extremely low saturation voltage * 10 * 4 continuous peak current, Karen Brand Shenzhen Ovis Technology Co., Ltd. is a high-tech enterprise focusing on the research and development of touch chips, single-chip computers, power management chips, voice chips, FETs, display driver chips, network receiver chips, operational amplifiers, infrared receiver heads and other semiconductor products, as well as acting as an agent for sales and promotion Since its establishment, Ovis Technology has been committed to the promotion and sales of new semiconductor products in China, with annual sales of more than 100 million yuan. It is a professional electronic component agent with comprehensive competitive advantages A series of excellent touch chips and voice chips promoted by our company are now used in large quantities in intelligent electronic locks, drinking fountains, rice cookers, LED table lamps and other controllers to provide customers with the best solutions, which are unanimously praised by customers. The superior industries of Ovis Technology are concentrated in the fields of household appliances and automotive electronics, including: intelligent electronic locks, water dispensers, cigarette smoking machines, air conditioners, washing machines, refrigerators, dishwashers, electric rice cookers, induction cookers, microwave ovens, electric bicycles, automobile instruments, automobile stereos, automobile air conditioners, etc. The sales network covers East China, South China and North China. Ovis Technology has provided services to many world famous enterprises, such as Midea, Xiaomi, Yunmi, Changhong, Skyworth, Samsung, LG, Philips, TCL, Haier, Meiling, Qinyuan, and many other Chinese first-class brand electronics manufacturers, Ovis Technology has provided professional intelligent electronic touch lock solutions, It also provides a complete set of chips for electronic locks: low-power touch chip low-power single-chip motor drive chip display drive chip card swiping chip hour chip memory chip voice chip low-voltage MOS tube TV