semiconductor material

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Semiconductor material is a kind of electronic material with semiconductor properties (the conductivity is between conductor and insulator, and the resistivity is about 1m Ω· cm~1G Ω· cm), which can be used to make semiconductor devices and integrated circuits.

Chinese name: semiconductor material
Foreign name: semiconductor material
Classification: Electronic materials

Conductivity: Between conductor and insulator
resistivity: 1mΩ·cm～1GΩ·cm
Role: Can be used to make semiconductor devices and integrated circuits
Characteristics: Semiconductor conductivity increases with temperature^{[3 ]}

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brief introduction

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The substances and materials in nature can be divided into conductor , semiconductor and insulator Three categories. Semiconductor resistivity Within the range of 1m Ω· cm ～ 1G Ω· cm (the upper limit is taken according to Xie Jiakui's Electronic Circuit, and 1/10 or 10 times of it is taken; the current description is temporarily used because the corner marker is unavailable). In general,^[1] The conductivity of semiconductor increases with temperature.^[2]^{[3 ]}

semiconductor material

All materials with the above two characteristics can be included in the scope of semiconductor materials. Various external factors such as light 、 heat , magnetic electric The physical effects and phenomena caused by the action on semiconductor can be collectively referred to as the semiconductor properties of semiconductor materials. constitute Solid state electronic device The majority of the matrix materials of these semiconductors are semiconductors, and it is the various semiconductor properties of these semiconductors that endow them with different types semiconductor device With different functions and features. The basic chemical feature of semiconductors is the existence of saturated covalent bonds between atoms. As a typical feature of covalent bond Lattice structure It shows a tetrahedron structure, so typical semiconductor materials include diamond or sphalerite (ZnS). Since most of the earth's mineral deposits are compounds, the semiconductor materials that were first used are compounds, such as galena (PbS), which was used for radio detection very early, Cuprous oxide (Cu2O) is used as a solid rectifier, and zinc blende (ZnS) is a well-known solid light-emitting material, silicon carbide (SiC) has also been used earlier. Selenium (Se) was first discovered and utilized Element semiconductor , used to be a solid rectifier and Photocell Important materials. Element semiconductor germanium The discovery of (Ge) amplification opened a new page in the history of semiconductors Electronic equipment Start to realize transistorization. China's semiconductor research and production began with the first preparation of high-purity germanium (99.999999%~99.9999999%) in 1957. Using element semiconductor silicon (Si) has not only increased the type and variety of transistors and improved their performance, but also ushered in large-scale and vlsi The era of. with Gallium arsenide The discovery of Ⅲ - Ⅴ compounds represented by (GaAs) has promoted the rapid development of microwave devices and optoelectronic devices.

Main types

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Semiconductor materials can be classified according to chemical composition Amorphous state It is separately classified with liquid semiconductor. According to this classification method, semiconductor materials can be divided into element semiconductors inorganic compound Semiconductor Organic compound Semiconductors and amorphous and liquid semiconductors.

Element semiconductor periodic table of ele ments There are 11 semi conductive species distributed from Ⅲ A to IVA families of

semiconductor material

The black box in the following table is the semiconductor of these 11 elements, where C represents diamond. C. P and Se have two forms: insulator and semiconductor; B. Si, Ge and Te have semiconductivity; Sn, As and Sb have two forms: semiconductor and metal. The melting point and boiling point of P are too low, and the vapor pressure of I is too high and easy to decompose, so their practical value is not great. The stable state of As, Sb and Sn is metal, and the semiconductor is unstable. B. C and Te have not been utilized due to the difficulties in preparation process and limitations in performance. Therefore, only Ge, Si and Se have been used in these 11 element semiconductors. Ge and Si are still the two most widely used semiconductor materials.

inorganic Compound semiconductor It is divided into binary system, ternary system, quaternary system, etc. Binary systems include: ① Group Ⅳ - Ⅳ: SiC and Ge Si alloys all have zinc blende structure. ② Group III-V: It is composed of group III elements Al, Ga, In and group V elements P, As, Sb in the periodic table. The typical representative is GaAs. They all have sphalerite structure, and they are second only to Ge and Si in application, and have great development prospects. ③ Group II - VI: Compounds formed by group II elements Zn, Cd, Hg and group VI elements S, Se, Te are some important Photoelectric material 。 ZnS, CdTe, HgTe have flash Zinc ore Structure. ④ Group I-VII: compounds formed by group I elements Cu, Ag, Au and group VII elements Cl, Br, I, in which CuBr and CuI have zinc blende structure. ⑤ Group V - VI: The compounds formed by the elements of group V, such as As, Sb, Bi, and the elements of group VI, such as S, Se, and Te, such as Bi2Te3, Bi2Se3, Bi2S3, and As2Te3, are important thermoelectric materials. ⑥ Family B and in the fourth cycle Transition family elements The oxides of Cu, Zn, Sc, Ti, V, Cr, Mn, Fe, Co and Ni are the main Thermistor Materials. ⑦ some Rare earth group element Sc, Y, Sm, Eu, Yb, Tm are compounds formed with Group V elements N, As or Group VI elements S, Se, Te. In addition to these binary compounds Solid solution semiconductor , such as Si AlP, Ge GaAs, InAs InSb, AlSb GaSb, InAs InP, GaAs GaP, etc. The study of these solid solutions can play a great role in improving some properties of single materials or opening up new applications.

semiconductor material

The ternary system includes: family: it is composed of one group II and one group IV atom to replace two group III atoms in the group III-V. For example, ZnSiP2, ZnGeP2, ZnGeAs2, CdGeAs2, CdSnSe2, etc. Family: It is composed of one group I and one group III atom to replace two group II atoms in group II - VI, such as CuGaSe2, AgInTe2, AgTlTe2, CuInSe2, CuAlS2, etc.: It is composed of one group I and one group V atom to replace two group III atoms in the group, such as Cu3AsSe4, Ag3AsTe4, Cu3SbS4, Ag3SbSe4, etc. In addition, there are quaternary systems whose structure is basically sphalerite (such as Cu2FeSnS4) and more complex inorganic compounds.

Organic compound semiconductor Organic semiconductor There are dozens of them, known as naphthalene, anthracene polyacrylonitrile , phthalocyanine and some Aromatic compound They have not yet been applied as semiconductors.

The biggest difference between amorphous and liquid semiconductors and crystalline semiconductors is that they do not have strict periodic arrangement crystal structure 。

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It has stable structure, excellent electrical characteristics and low cost, and can be used to manufacture Field effect transistor 。

Scientists said that the latest research is expected to make artificial skin, smart bandages, flexible displays, smart windscreens, wearable electronic devices and electronic wallpapers into reality.

The main reason for the high price is that electronic products such as televisions, computers and mobile phones are made of silicon, and the manufacturing cost is very high; Carbon based (plastic) organic electronic products are not only easy to manufacture and low cost, but also lightweight, flexible and flexible, representing the future trend of "electronic equipment everywhere".

Previous studies have shown that the larger the carbon structure, the better its performance. However, scientists have never developed an effective method to produce larger, stable and soluble carbon structures for research until this Zuchescu team developed this new organic semiconductor material for transistor manufacturing.

Organic semiconductor It is a kind of plastic material, whose special structure makes it conductive. In modern electronic equipment, circuits use transistors to control the current between different areas. Scientists have studied new organic semiconductor materials and explored the relationship between their structure and electrical properties.

Practical application

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Preparation of different semiconductor devices has different morphological requirements for semiconductor materials, including single crystal slicing Abrasive disc 、 polishing Film, film, etc. Different shapes of semiconductor materials require different processing technologies. The commonly used semiconductor material preparation processes include purification, single crystal preparation and thin film epitaxial growth.

semiconductor material

All semiconductor materials need to be purified, and the required purity is more than 6 "9", up to 11 "9". There are two kinds of purification methods. One is to purify without changing the chemical composition of the material, which is called physical purification; The other is to transform elements into compounds for purification, and then reduce the purified compounds into elements, which is called chemical purification. Physical purification methods include vacuum Evaporation, regional refining, crystallization purification, etc., regional refining is the most widely used. The main methods of chemical purification are electrolysis , complexation, extraction, distillation, etc., distillation is the most widely used. Because each method has certain limitations, the process flow combining several purification methods is often used to obtain qualified materials.

Most semiconductor devices are Monocrystal Or on an epitaxial wafer with a single crystal wafer as the substrate. Lots of semiconductor single crystals are produced by melt growth method. Czochralski is the most widely used method. 80% of silicon single crystals, most germanium single crystals and indium antimonide single crystals are produced by this method, and the maximum diameter of silicon single crystals has reached 300 mm. Feed in the melt magnetic field The Czochralski method, known as the magnetically controlled Czochralski method, has been used to produce highly homogeneous silicon single crystals. Add liquid covering agent on the surface of the crucible melt to weigh the liquid sealed Czochralski method, and use this method to draw gallium arsenide Gallium phosphide Indium phosphide and other single crystals with large decompression. Floating zone melting High purity silicon single crystal was grown by this method without contacting the container. The horizontal zone melting method is used to produce germanium single crystals. The horizontal directional crystallization method is mainly used to prepare GaAs single crystals, while the vertical directional crystallization method is used to prepare GaAs single crystals Cadmium telluride Gallium arsenide. Bulk single crystals produced by various methods Crystal orientation , rolling, reference surface, slicing, grinding, chamfering, polishing, corrosion, cleaning, testing, packaging and other processes in whole or in part to provide corresponding wafers.

The growth of single crystal thin films on single crystal substrates is called epitaxy. The methods of epitaxy include gas phase, liquid phase, solid phase, molecular beam epitaxy, etc. Chemical vapor epitaxy is mainly used in industrial production, followed by liquid phase epitaxy. Vapor phase epitaxy of organometallic compounds and molecular beam epitaxy It is used to prepare micro structures such as quantum wells and superlattices. Amorphous, microcrystalline and polycrystalline films are often used on glass, ceramic, metal and other substrates Chemical vapor deposition , magnetron sputtering, etc.

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Single crystal preparation

To eliminate Polycrystalline material The grain boundary between the small crystals in the middle has a great influence on the characteristic parameters of semiconductor materials. The substrate material of semiconductor devices is usually single crystal. Generally, single crystal preparation can be divided into bulk single crystal (i.e. bulk single crystal) preparation and thin film single crystal preparation. Bulk single crystal has high output, high utilization rate and is relatively economical. However, many device structures require thin single crystals with a thickness of micron. Due to the low temperature required for the preparation of thin single crystals, better quality single crystals can often be obtained. The specific preparation methods are as follows: ① From melting

semiconductor material

Single crystal drawn in the body: small single crystals of the same material as the melt are used as seed crystals. When the seed crystal contacts the melt and is pulled upward, the melt depends on surface tension It is also pulled out of the liquid level and crystallized to be the same as the seed crystal Crystal orientation ② Single crystal preparation by zone melting: a seed crystal is fused with the semiconductor ingot bar at the head, and the crystalline part becomes single crystal as the melting zone moves. ③ Recrystallization from solution. ④ Single crystals are grown from the vapor phase. The first two methods are used to grow bulk single crystals. Germanium and silicon single crystals with a diameter of 200 mm and a length of 1~2 m can already be prepared by the Czochralski method. The latter two methods are mainly used to grow thin single crystals. The growth of this thin single crystal is generally called epitaxial growth , thin layer materials grow in another Single crystal On. This other single crystal material is called the substrate. On the one hand, it serves as the attachment of thin layer materials, and on the other hand, it is the seed crystal required for single crystal growth. The substrate and epitaxial layer can be the same material (homoepitaxy) or different materials (heteroepitaxy). The epitaxial growth method based on the principle of recrystallization from solution is called liquid phase epitaxy; Vapor phase epitaxy is based on the principle of growing single crystal from vapor phase. Liquid phase epitaxy is to dissolve the required epitaxial layer material (as solute, such as GaAs) in a solvent (such as liquid gallium) to form a saturated solution, and then immerse the substrate in this solution to gradually reduce its temperature Supersaturated solution The thin single crystal layer is crystallized on the substrate surface. Vapor phase epitaxy growth can use some compound gas or steam containing the required materials as components to deposit on the substrate through chemical reactions such as decomposition or reduction, or use the required materials as source materials, and then make the source materials become gaseous through physical processes such as vacuum evaporation, sputtering, and then condense on the substrate. molecular beam epitaxy Is an improved Vacuum evaporation process 。 By using this method, the vapor rate to the substrate can be precisely controlled, and ultra-thin single crystals with a thickness of only a few atoms can be obtained, and multilayer epitaxial materials with different materials and different thicknesses can be obtained. Amorphous semiconductor Although there is no single crystal preparation problem, the preparation process is similar to the above methods, and the commonly used method is to grow thin film amorphous materials from the vapor phase.

Wide band gap semiconductor materials

semiconductor material

Gallium nitride silicon carbide and zinc oxide They are all broadband gap semiconductor materials, because their bandgap widths are all 3 Electron volt Above, it is impossible to change Valence band electron The conduction band is excited. device The working temperature can be very high, for example, silicon carbide can work to 600 degrees Celsius; If the diamond is made into a semiconductor, the temperature can be higher, and the device can be used to collect relevant information on the oil drill probe. They also have important applications in aviation, aerospace and other harsh environments. Radio and television stations, the only high-power transmitting tube Electronic tube , not replaced by semiconductor devices. The service life of this kind of electronic tube is only two or three thousand hours. It is large and very power consuming; If high power emission devices made of silicon carbide are used, the volume can be reduced at least dozens to hundreds of times, and the life will also be greatly increased. Therefore, high temperature wide band gap semiconductor materials are very important new semiconductor materials.

This material is very difficult to grow. Silicon grows on silicon and GaAs grows on gallium arsenide. It can grow well. But most of these materials do not have block materials, so they have to use other materials as substrates to grow. For example, gallium nitride Sapphire substrate Upper growth, sapphire Gallium nitride Coefficient of thermal expansion and lattice constant There are many defects in the grown epitaxial layer, which is the biggest problem and difficulty. In addition, the processing and etching of this material are also difficult. Scientists are trying to solve this problem. If this problem is solved, it will provide a very broad space for discovering new materials.

Low dimensional semiconductor materials

In fact, the low dimensional semiconductor materials mentioned here are nanomaterials. The reason why they are unwilling to use this word is to develop Nano science and technology One of the important purposes of the "nano biosensor" is that people can control and manufacture powerful and superior nano electronic, optoelectronic devices and circuits, nano biosensor devices, etc. at the atomic, molecular or nano scale to benefit mankind. It can be expected that the development and application of nano science and technology will not only completely change people's production and lifestyle, but also change the social and political pattern and the confrontation form of war. This is also why people are interested in development Nano semiconductor The reason why technology is very important.

semiconductor material

In the block material, electrons can move freely in three dimensional directions. But when the characteristic size of the material is larger in one dimension than that of the electronic Mean free path When it is smaller, the movement of electrons in this direction will be limited. The energy of electrons is no longer continuous, but quantized. We call this material Superlattice Quantum well materials. Quantum wire material means that electrons can only move freely along the direction of quantum wire, and the other two directions are restricted; Quantum dot material means that the size in three dimensions of the material is smaller than the average free path of the electron, the electron cannot move freely in three directions, and the energy is quantized in three directions.

For the above reasons, the state of the electron density function The block material is a parabola, on which electrons can move freely; If it is quantum dot The density of state function of a material is like a single molecule or atom, which is completely an isolated function distribution. Based on this feature, powerful quantum devices can be manufactured.

semiconductor material

large-scale integrated circuit Its memory is realized by charging and discharging a large number of electrons. The flow of a large number of electrons needs to consume a lot of energy to cause the chip to heat up, which limits the integration. If a memory made of a single electron or several electrons is used, not only the integration can be improved, but also the power consumption problem can be solved. The efficiency of the laser is not high, because the wavelength of the laser changes with the temperature, and generally the wavelength will red shift with the temperature increasing, so the laser used for optical fiber communication must control the temperature. If available Quantum dot laser Replace existing Quantum well laser These problems can be easily solved.

semiconductor material

GaAs and InP based superlattices and quantum well materials have been developed maturely and widely used in Optical communication , mobile communication Microwave communication The domain of. Quantum cascade laser As a unipolar device, it is a new type of mid and far infrared light source developed in the last decade. It has important application prospects in free space communication, infrared countermeasures and remote chemical sensing. It has high requirements for the preparation process of MBE. The entire device structure has hundreds to thousands of layers, and the thickness of each layer must be controlled at a precision of a few tenths of a nanometer. China has made internationally advanced achievements in this field; Another example is interband quantum tunneling transport in multiple active regions and opto coupled quantum wells Laser It has the characteristics of high quantum efficiency, high power and good beam quality, and China has a good research foundation; In quantum dot (wire) materials and Quantum dot laser And other research aspects have also made remarkable achievements of international peers.

Impurities and defects in materials

Most of the impurity control methods involve the simultaneous incorporation of a certain type and a certain number of impurity atoms into the crystal growth process. The final distribution of these impurity atoms in the crystal depends not only on the growth method itself, but also on the selection of growth conditions. For example, the impurity distribution during the Czochralski growth is not only affected by the segregation rule of impurities, but also affected by the irregular convection in the melt, resulting in fluctuations in the impurity distribution. In addition, no matter which crystal growth method is used, impurities will be introduced into the container, heater, environmental atmosphere and even the substrate during the growth process, which is called self doping. The control of crystal defects is also achieved by controlling the crystal growth conditions (such as the symmetry of the thermal field around the crystal, temperature fluctuations, environmental pressure, growth rate, etc.). With the shrinking of device size, the inhomogeneity of impurity distribution in micro areas and the size of micro defects of atomic order of magnitude in crystals will also be limited. Therefore, how to carefully design and strictly control the growth conditions to meet various requirements for impurities and defects in semiconductor materials is a central issue in semiconductor material technology.

Characteristic information

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characteristic parameter

semiconductor material

Although there are many kinds of semiconductor materials, they have some inherent characteristics, which are called characteristic parameters of semiconductor materials. These characteristic parameters can not only reflect the difference between semiconductor materials and other non semiconductor materials, but also, more importantly, reflect the difference in the amount of characteristics between various semiconductor materials or even the same material under different conditions. Common characteristic parameters of semiconductor materials include: band gap width, resistivity carrier Mobility (carrier is the electron and hole )、 Nonequilibrium carrier lifetime Dislocation density. The band gap is determined by the electronic state atom The configuration determination reflects the energy required for the valence electrons in the atoms of this material to be excited from the bound state to the free state. Resistivity Carrier mobility Reflects the conductivity of the material. The nonequilibrium carrier lifetime reflects the relaxation characteristics of the carriers in semiconductor materials under external action (such as light or electric field) from nonequilibrium state to equilibrium state. Dislocation is one of the most common crystal defects. Dislocation density can be used to measure semiconductor Single crystal The degree of lattice integrity. Of course, for Amorphous semiconductor There is no such characteristic parameter reflecting lattice integrity.

Characteristic requirements

semiconductor material

The characteristic parameters of semiconductor materials are very important for material applications. Because different characteristics determine different uses.

Requirements for material characteristics of transistors: according to the operating principle of transistors, large Nonequilibrium carrier lifetime and Carrier mobility 。 Transistors made of materials with high carrier mobility can operate at higher frequencies (with better frequency response). Crystal defects will affect the characteristics of transistors and even make them invalid. The operating temperature high temperature limit of the transistor is determined by the band gap width. The larger the band gap is, the higher the high temperature limit for normal operation of the transistor is.

Requirements for material characteristics of photoelectric devices: Radiation detector The applicable radiation frequency range is related to the band gap width of the material. The greater the non-equilibrium carrier life of the material, the higher the sensitivity of the detector, and the longer the time (i.e. the relaxation time of the detector) from the light acting on the detector to generating a response. Therefore, high sensitivity and short Relaxation time It is difficult to balance the two. about Solar cell For example, in order to obtain high conversion efficiency, the material is required to have a large non-equilibrium carrier life and a moderate band gap width (the band gap width between 1.1 and 1.6 electron volts is the most appropriate). Crystal defects will cause Semiconductor light-emitting diode 、 Semiconductor laser diode The luminous efficiency of is greatly reduced.

Requirements for material properties of thermoelectric devices: in order to improve the conversion efficiency of thermoelectric devices, the temperature difference at both ends of the device must be large. When the temperature at the low temperature (generally the ambient temperature) is fixed, the temperature difference is determined by the temperature at the high temperature, that is, the working temperature of the thermoelectric device. In order to adapt to sufficiently high operating temperature, it is required that the band gap width of the material should not be too small, and then the material should have a large Thermoelectric electromotive force Rate, small resistivity And small Thermal conductivity 。

Material process

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The Size of Characteristic Parameters of Semiconductor Materials and Impurities in Materials atom It has a lot to do with crystal defects. For example, the resistivity may vary widely due to the type and number of impurity atoms Carrier mobility And unbalanced load Streamer life

semiconductor material

Generally, it decreases with the increase of impurity atoms and crystal defects. On the other hand, various semiconductor properties of semiconductor materials can not be separated from the role of various impurity atoms. As for crystal defects, in addition to reducing and eliminating them as much as possible in general, in some cases, they also want to be controlled at a certain level, and even when there are defects, they can be used after appropriate treatment. In order to limit and utilize the impurity atoms and crystal defects of semiconductor materials, it is necessary to develop a set of methods to prepare qualified semiconductor materials, namely the so-called semiconductor material process. These processes can be roughly summarized as purification, single crystal preparation and impurity and defect control.

The purification of semiconductor materials is mainly to remove impurities in materials. The purification methods can be divided into chemical methods and physical methods. Chemical purification It is to make materials into some intermediate compounds so as to systematically remove some impurities, and finally separate materials (elements) from some easily decomposed compounds. Physical purification Zone melting technology is commonly used, that is, semiconductor materials are cast into ingots, and a certain length of melting zone is formed from one end of the ingot. Using the segregation phenomenon of impurities in the solidification process, when the melting zone moves repeatedly from one end to the other, impurities are enriched at both ends of the ingot bar. Remove the material at both ends, and the remaining is the material with high purity (see Zone melting crystal growth ）。 In addition, there are physical methods such as vacuum evaporation and vacuum distillation. Germanium and silicon are the semiconductor materials with the highest purity that can be obtained, and the proportion of the main impurity atoms can be less than 1/10 billion.

Application development

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Early application

semiconductor material

The first application of semiconductor is to use its rectification effect As a detector, it is a point contact diode (also known as a cat whisker detector, that is, a metal probe contacts a semiconductor to detect electromagnetic waves). In addition to detectors, in the early days, semiconductors were also used as rectifiers, photovoltaic cells, infrared detectors, etc. The four effects of semiconductors were used.

From 1907 to 1927, American physicists successfully developed crystal rectifiers, selenium rectifiers and Cuprous oxide Rectifier. In 1931, Ranjihe Bergman The selenium photovoltaic cell has been successfully developed. In 1932, Germany successively developed lead sulfide, lead selenide, lead telluride and other semiconductor infrared detectors, which were used to detect aircraft and ships in World War II. During World War II, the Allied forces also made great achievements in semiconductor research, and Britain used infrared detectors to detect German aircraft for many times.

Development status

Compared with the semiconductor equipment market, the semiconductor material market has been in a supporting role for a long time, but with the growth of chip shipments, the material market will continue to grow and begin to shake off the shadow of the flashy equipment market. Calculated by sales revenue,

semiconductor material

Japan maintains its position as the largest semiconductor material market. However, Taiwan, ROW and South Korea have also begun to rise as important markets. The rise of the material market reflects the development of device manufacturing in these regions. wafer Both the manufacturing material market and the packaging material market have achieved growth, and the growth will tend to moderate in the future, but the growth momentum will remain.

The American Semiconductor Industry Association (SIA) predicted that the semiconductor market revenue in 2008 would be close to 267 billion dollars, achieving growth for the fifth consecutive year. Coincidentally, the semiconductor material market also continuously rewrites the records of sales revenue and shipment volume in the same time. Wafer manufacturing materials and packaging materials have both gained growth. It is estimated that the market revenue of these two parts will be 26.8 billion dollars and 19.9 billion dollars respectively this year.

Japan continues to maintain its leading position in the semiconductor material market, accounting for 22% of the total market. In 2004, Taiwan surpassed North America as the second largest semiconductor material market. North America ranked fifth behind ROW (Rest of World) and South Korea. ROW includes Singapore, Malaysia, Thailand and other Southeast Asian countries and regions. Many new wafer fabs are invested and constructed in these regions, and each region has a more solid packaging foundation than North America.

Chip manufacturing materials account for 60% of the semiconductor material market, most of which come from Silicon wafer 。 Silicon wafers and photomask together account for 62% of wafer manufacturing materials. All wafer manufacturing materials in 2007, except wet Chemical Reagents , photomask and sputtering target, which have achieved strong growth, making the overall market of wafer manufacturing materials grow by 16%. In 2008, the growth of wafer manufacturing material market was relatively flat, with a growth rate of 7%. It is estimated that the growth rate will be 9% and 6% respectively in 2009 and 2010.

One of the most significant changes in the semiconductor material market is the rise of the packaging material market. In 1998, the packaging material market accounted for 33% of the semiconductor material market, and this share is expected to increase to 43% in 2008. This change is due to Ball grid array Rolled substrates and advanced polymeric materials are increasingly used in chip level packaging and flip chip packaging. As the portability and functionality of products put forward higher requirements for packaging, it is expected that these materials will achieve more robust growth in the next few years. In addition, the sharp rise in gold price led to a 36% increase in wire bonding in 2007.

Similar to wafer manufacturing materials, Semiconductor packaging The growth rate of materials will also slow down in the next three years, with the growth rate of 5% in 2009 and 2010, reaching US $20.9 billion and US $22 billion respectively. Apart from the gold price factor, and the rolled substrate is not included in the statistics, the actual growth rate is 2% to 3%.

Developed by Chinese scientists New semiconductor materials

In April 2024, a reporter from Xinhua News Agency learned from East China University of Science and Technology that the school's clean energy materials and devices team independently developed a common growth technology for perovskite single crystal chips, which shortened the crystal growth cycle from 7 days to 1.5 days, and realized the low-temperature, rapid and controllable preparation of more than 30 kinds of metal halide perovskite semiconductors, providing abundant resources for a new generation of high-performance optoelectronic devices Rich material warehouse.^[4]

strategic role

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In the middle of the 20th century, monocrystalline silicon And semiconductor transistor and its silicon Integrated circuit The successful development of industrial revolution ； Early 1970s Quartz optical fiber The invention of materials and GaAs lasers has promoted Optical fiber Communication technology has developed rapidly and gradually formed High tech industry , making mankind enter the information age. The concept of superlattice and its application Semiconductor superlattice The successful development of quantum well materials has completely changed the design idea of photoelectric devices, making the design and manufacture of semiconductor devices from "impurity engineering" to "energy band engineering". nanometer The development and application of science and technology will enable mankind to control, manipulate and manufacture powerful new devices and circuits at the atomic, molecular or nanoscale level, profoundly affect the world's political and economic patterns and the form of military confrontation, and completely change people's way of life.

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