| model: | ZXMN6A25GTA |
|
| Lead free: | Lead |
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | DIODES INC |
| Part package code: | TO-261AA |
| Packing instructions: | SMALL OUTLINE, R-PDSO-G4 |
| Number of stitches: | four |
| Reach Compliance Code： | not_compliant |
| ECCN code: | EAR99 |
| Factory Lead Time： | 17 weeks |
| Risk level: | one point zero four |
| Samacsys Confidence： | three |
| Samacsys Status： | Released |
| 2D Presentation： | https://componentsearchengine.com/2D/0T/441791.1.1.png |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=441791 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=441791 |
| 3D View： | https://componentsearchengine.com/viewer/3D.php?partID=441791 |
| Samacsys PartID： | four hundred and forty-one thousand seven hundred and ninety-one |
| Samacsys Image： | https://componentsearchengine.com/Images/9/ZXMN6A25GTA.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/1/ZXMN6A25GTA.jpg |
| Samacsys Pin Count： | four |
| Samacsys Part Category： | MOSFET (N-Channel) |
| Samacsys Package Category： | SOT223 (3-Pin) |
| Samacsys Footprint Name： | ZXMN6A25GTA-+- |
| Samacsys Released Date： | 2020-04-14 13:28:10 |
| Is Samacsys： | N |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 60 V |
| Maximum drain current (ID): | 4.8 A |
| Maximum drain source on resistance: | 0.05 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-261AA |
| JESD-30 code: | R-PDSO-G4 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | four |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum pulse drain current (IDM): | 28.5 A |
| Certification status: | Not Qualified |
| Surface mounting: | YES |
| Terminal surface layer: | Matte Tin (Sn) |
| Terminal type: | GULL WING |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | forty |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
