model: | ZXM63N03NXTA |
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Lifecycle: | Active |
IHS Manufacturer: | DIODES INC |
Part package code: | SOT |
Packing instructions: | SMALL OUTLINE, S-PDSO-G8 |
Number of stitches: | eight |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
Risk level: | five point two |
Is Samacsys: | N |
Other features: | LOW THRESHOLD |
to configure: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 30 V |
Maximum drain current (ID): | 2.3 A |
Maximum drain source on resistance: | 0.135 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | S-PDSO-G8 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | two |
Number of terminals: | eight |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | SQUARE |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | N-CHANNEL |
Certification status: | Not Qualified |
Surface mounting: | YES |
Terminal surface layer: | MATTE TIN |
Terminal type: | GULL WING |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | forty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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