| model: | ZVP1320A |
|
| Rohs certification or not: | Non conformance |
| Lifecycle: | Transferred |
| Packing instructions: | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code： | unknown |
| ECCN code: | EAR99 |
| HTS Code: | 8541.21.00.95 |
| Risk level: | five point zero six |
| to configure: | SINGLE |
| Minimum drain source breakdown voltage: | 200 V |
| Maximum drain current (Abs) (ID): | 0.07 A |
| Maximum drain current (ID): | 0.07 A |
| Maximum drain source on resistance: | 80 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss): | 5 pF |
| JESD-30 code: | O-PBCY-W3 |
| JESD-609 code: | e0 |
| Number of elements: | one |
| Number of terminals: | three |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 200 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | ROUND |
| Packaging form: | CYLINDRICAL |
| Polarity/Channel Type: | P-CHANNEL |
| Maximum power dissipation (Abs): | 0.8 W |
| Certification status: | Not Qualified |
| Subcategory: | Other Transistors |
| Surface mounting: | NO |
| Terminal surface layer: | Tin/Lead (Sn/Pb) |
| Terminal type: | WIRE |
| Terminal location: | BOTTOM |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
