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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • YTAF833
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  •  QQ:2881495808 QQ:2881495808 copy
     QQ:308365177 QQ:308365177 copy
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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Product parameters of product model YTAF833 and instructions for use of YTAF833

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YTAF840 Product Parameters
model: YTAF840
Lifecycle: Active
Part package code: SC-67
Packing instructions: FLANGE MOUNT, R-PSFM-T3
Number of stitches: three
Reach Compliance Code: unknown
Risk level: five point seven six
Avalanche energy efficiency grade (Eas): 312 mJ
Enclosure connection: ISOLATED
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 500 V
Maximum drain current (ID): 8 A
Maximum drain source on resistance: 0.85 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: R-PSFM-T3
JESD-609 code: e0
Number of elements: one
Number of terminals: three
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Packaging body material: PLASTIC/EPOXY
Package shape: RECTANGULAR
Packaging form: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Maximum power consumption environment: 40 W
Maximum pulse drain current (IDM): 32 A
Certification status: Not Qualified
Surface mounting: NO
Terminal surface layer: TIN LEAD
Terminal type: THROUGH-HOLE
Terminal location: SINGLE
Transistor applications: SWITCHING
Transistor element material: SILICON
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