model: | US6M2TR |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Active |
IHS Manufacturer: | ROHM CO LTD |
Packing instructions: | SMALL OUTLINE, R-PDSO-F6 |
Number of stitches: | six |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
Factory Lead Time: | 16 weeks |
Risk level: | one point six five |
Samacsys Confidence: | three |
Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/727569.1.23.png |
Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=727569 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=727569 |
3D View: | https://componentsearchengine.com/viewer/3D.php?partID=727569 |
Samacsys PartID: | seven hundred and twenty-seven thousand five hundred and sixty-nine |
Samacsys Image: | https://componentsearchengine.com/Images/9/US6M2TR.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/1/US6M2TR.jpg |
Samacsys Pin Count: | six |
Samacsys Part Category: | Transistor |
Samacsys Package Category: | SO Transistor Flat Lead |
Samacsys Footprint Name: | TUMT6 |
Samacsys Released Date: | 2018-09-05 17:55:49 |
Is Samacsys: | N |
to configure: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 30 V |
Maximum drain current (Abs) (ID): | 1.5 A |
Maximum drain current (ID): | 1.5 A |
Maximum drain source on resistance: | 0.34 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | R-PDSO-F6 |
JESD-609 code: | e2 |
Humidity sensitivity level: | one |
Number of elements: | two |
Number of terminals: | six |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | N-CHANNEL AND P-CHANNEL |
Maximum power dissipation (Abs): | 1 W |
Certification status: | Not Qualified |
Subcategory: | Other Transistors |
Surface mounting: | YES |
Terminal surface layer: | TIN COPPER |
Terminal type: | FLAT |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | ten |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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