Silicon Carbide Transistor (SiC triode for short) is a kind of semiconductor material made of silicon carbide (SiC STM32F401RCT6 triode. It has excellent characteristics of high temperature, high voltage and high frequency. It can replace the triode made of traditional silicon materials and play a better role in high temperature, high voltage, high frequency and other special environments.
1、 Basic structure:
The basic structure of silicon carbide triode includes P-type doped region, N-type doped region and N-type doped region. The structure between the P-type doped region and the N-type doped region forms a PN junction, which plays a rectifying role. The structure between the P-type doped region and the N-type doped region forms a diode. The structure between the N-type doped region and the N-type doped region forms the NPN type triode. The whole structure is encapsulated in a metal shell to protect the device from the impact of the external environment.
2、 Advantages and disadvantages:
Compared with the traditional silicon triode, the silicon carbide triode has the following advantages:
1. High temperature characteristics: silicon carbide has high thermal conductivity and thermal stability, can work normally under high temperature environment, and is suitable for applications under high temperature conditions.
2. High voltage characteristics: silicon carbide has high breakdown electric field strength, can withstand high voltage, and is suitable for high-voltage applications.
3. High frequency characteristics: silicon carbide has high electron migration speed and small capacitance effect, which can realize high-speed switching and high-frequency operation.
4. Low conduction loss: the conduction loss of silicon carbide is low, which can improve energy efficiency and save energy.
However, the silicon carbide triode also has some disadvantages:
1. High manufacturing cost: the manufacturing and processing technology of silicon carbide materials is still complex and expensive compared with mature silicon materials.
2. Difficult manufacturing process: due to the special properties of silicon carbide materials, the manufacturing process of silicon carbide triode is relatively difficult and the production efficiency is low.
3、 Operating principle:
The working principle of silicon carbide triode is similar to that of traditional silicon triode. When the forward voltage is applied to the PN junction, the holes in the P region and the free electrons in the N region will diffuse to the isolated region. When a forward voltage is applied to the base, free electrons in N region will be attracted to the base, forming electron hole pairs, and holes in N region will diffuse to the base. When the electron hole pair enters the base, because the doping type of the base is N-type, the electron hole pair further diffuses to the collector. In this way, a current is formed, thus realizing the amplification and switching functions of the triode.
4、 Application:
Silicon carbide triode can be widely used in the field of power electronics, including inverter, UPS power supply, electric vehicle, solar inverter, etc. Its characteristics of high temperature, high frequency and high voltage withstand make it have broad application prospects in efficient energy conversion and power transmission.
5、 Working status:
The working state of silicon carbide triode mainly includes on state and off state. In the on state, the electric barrier formed at the P-N junction of the triode narrows, allowing current to pass through. In the off state, the electric barrier at the P-N junction increases, preventing the current from passing through.
6、 Installation steps:
When installing the silicon carbide triode, the following steps should be noted:
1. Preparation: First, confirm whether the model and specification of the silicon carbide triode used are correct, and check whether there is damage or missing. At the same time, check whether the radiator, insulating gasket, screws and other installation accessories are complete.
2. Preparation of radiator: place the radiator on the installation position and fix it with screws to ensure that the surface of the radiator is flat, clean and can dissipate heat well.
3. Installation of insulation gasket: place the insulation gasket on the radiator to ensure that it fits closely with the radiator and will not move or slide.
4. Installation of triode: place the silicon carbide triode on the insulating gasket to ensure that the pin is aligned with the bonding pad on the radiator. At the same time, avoid exerting too much pressure on the triode pin to avoid damaging the package.
5. Pin welding: use soldering tin to weld the pin of the silicon carbide triode with the bonding pad on the radiator to ensure good welding quality and bright and firm solder joints.
6. Insulation treatment: place the insulating piece above the silicon carbide triode to protect the triode from the impact of the external environment. Ensure that the insulating sheet covers the entire triode and is in close contact with the radiator.
7. Fixed installation: fix the insulating sheet and silicon carbide triode on the radiator with screws to ensure firm and reliable installation.
8. Inspection and test: After installation, conduct appearance inspection to ensure correct installation and no damage. Then, test the connecting circuit and radiator to ensure the normal operation of the silicon carbide triode.
7、 Test method:
The test methods of silicon carbide triode mainly include static parameter test and dynamic parameter test. The static parameter test includes the conduction voltage, cut-off voltage and leakage current of the test device; The dynamic parameter test includes the switching speed, switching loss and reverse recovery time of the test device.
8、 History:
Silicon carbide triode (SiC triode) is a transistor based on silicon carbide semiconductor materials. It has high operating temperature capability, high voltage withstand capability and high frequency characteristics, so it has broad application prospects in high temperature and high frequency applications.
The development history of SiC triode can be traced back to the 1950s. The first experiment was conducted in 1962 by J Balder and R Meijer reported that they successfully prepared the earliest silicon carbide triode. However, at that time, it was very difficult to prepare high-quality SiC materials, so the development of SiC triodes was limited.
In the 1980s, with the progress of material growth technology, the quality of SiC materials was significantly improved. Subsequently, researchers began to explore the performance and application of SiC triode. In 1994, Toshiba Corporation of Japan commercialized the SiC triode for the first time, which marked the beginning of the commercialization process of the SiC triode.
In recent years, with the further development of silicon carbide material preparation technology, the performance of SiC triode has been continuously improved. It has been widely used in the fields of high temperature, high frequency and high voltage, such as energy conversion, power electronics, automotive electronics and aerospace. The high temperature and high frequency characteristics of SiC triode make it have great potential in high efficiency power conversion and high frequency circuit.
