This is the triode nomenclature unified by the International Semiconductor Federation: B represents silicon material; U refers to high-power switch tube. 508 is the product registration number (indicating its parameters at the same time); A is his level code (for the same type of triode, a certain parameter is differentiated by grades). In a word, there are various naming methods for triodes, including domestic ones, European and American ones. Japan and so on. At present, Japan is the most widely used, Europe and the United States are less, and domestic ones are even less.
Category: Split semiconductor products
Home: transistor (BJT) - single circuit
Transistor type: NPN
Current collector (Ic) (maximum): 8A
Voltage - collector emitter breakdown (maximum): 700V
Vce saturation at Ib, Ic (maximum): 1V @ 2A, 4.5A
Current collector cut-off (maximum): 1mA
Minimum DC current gain (hFE) at certain Ic and Vce:-
Power - maximum: 125W
Frequency conversion: 7MHz
Installation type: through hole
Transistor polarity: NPN
Power consumption (Pd): 125
Collector base breakdown voltage (Ucb): 1500
Collector emitter breakdown voltage (Uce): 700
Emitter base breakdown voltage (Ueb): 0
Maximum collector current (Ic): 8
Maximum operating temperature (Tj), ° C: 150
Maximum operating frequency (ft): 7
Output capacitance (Cc), pF: 125
DC current gain (hfe): 10
Transistor package type: TOP3
