| model: | SMCJ100AHM6G |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | TAIWAN SEMICONDUCTOR CO LTD |
| Packing instructions: | R-PDSO-C2 |
| Reach Compliance Code： | not_compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.10.00.50 |
| Risk level: | five point one three |
| Other features: | EXCELLENT CLAMPING CAPABILITY |
| Maximum breakdown voltage: | 123 V |
| Minimum breakdown voltage: | 111 V |
| to configure: | SINGLE |
| Diode element material: | SILICON |
| Diode type: | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95 code: | DO-214AB |
| JESD-30 code: | R-PDSO-C2 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Maximum nonrepeatable peak reverse power dissipation: | 1500 W |
| Number of elements: | one |
| Number of terminals: | two |
| Maximum operating temperature: | 150 °C |
| Minimum operating temperature: | -55 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity: | UNIDIRECTIONAL |
| Maximum power dissipation: | 5 W |
| Reference standards: | AEC-Q101 |
| Maximum repetitive peak reverse voltage: | 100 V |
| Surface mounting: | YES |
| Technology: | AVALANCHE |
| Terminal surface layer: | Matte Tin (Sn) |
| Terminal type: | C BEND |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | thirty |
| Base Number Matches： | one |
|
