SI71285DY-T1-E3 Chinese Information Application Article Market Situation Hot Spot Use Introduction - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • SI71285DY-T1-E3
  • number -
  • manufactor -
  • encapsulation -
  • Batch No -
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  •  QQ:2881495808 QQ:308365177
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  Drawing of SI71285DY-T1-E3
  • Shenzhen Xinmai Industrial Co., Ltd

      This member has used this website for more than 11 years
  • SI71285DY-T1-E3
  • number 26980 
  • manufactor VISHAY 
  • encapsulation QFN8 
  • Batch No New environmental protection batch
  • Newly arrived spot goods, first-hand source of goods, same day delivery, bom order allocation
  •  QQ:2881614656
  • 0755-84507451  QQ:2881614656
  •  Drawing of SI71285DY-T1-E3
  • Shenzhen First Line Semiconductor Co., Ltd

      This member has used this website for more than 16 years
  • SI71285DY-T1-E3
  • number 18000 
  • manufactor Original brand
  • encapsulation Original factory appearance
  • Batch No  
  • New and original parts of the stock and other orders
  •  QQ:2881493920 QQ:2881493921
  • 0755-88608801 multi line  QQ:2881493920 QQ:2881493921
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SI7129DN-T1-GE3 product parameters
model: SI7129DN-T1-GE3
Lead free: Lead free
Lifecycle: Active
Packing instructions: SMALL OUTLINE, S-XDSO-C5
Number of stitches: eight
Reach Compliance Code: unknown
ECCN code: EAR99
Risk level: five point six nine
Avalanche energy efficiency grade (Eas): 31.25 mJ
Enclosure connection: DRAIN
to configure: SINGLE WITH BUILT-IN DIODE
Minimum drain source breakdown voltage: 30 V
Maximum drain current (Abs) (ID): 35 A
Maximum drain current (ID): 35 A
Maximum drain source on resistance: 0.0114 Ω
FET technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 code: S-XDSO-C5
JESD-609 code: e3
Humidity sensitivity level: one
Number of elements: one
Number of terminals: five
Operating mode: ENHANCEMENT MODE
Maximum operating temperature: 150 °C
Packaging body material: UNSPECIFIED
Package shape: SQUARE
Packaging form: SMALL OUTLINE
Peak reflux temperature (° C): two hundred and sixty
Polarity/Channel Type: P-CHANNEL
Maximum power dissipation (Abs): 52.1 W
Maximum pulse drain current (IDM): 60 A
Certification status: Not Qualified
Subcategory: Other Transistors
Surface mounting: YES
Terminal surface layer: Matte Tin (Sn)
Terminal type: C BEND
Terminal location: DUAL
Maximum time at peak reflux temperature: forty
Transistor applications: SWITCHING
Transistor element material: SILICON
Base Number Matches: one
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