| model: | SI7120ADN-T1-GE3 |
|
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | VISHAY SILICONIX |
| Packing instructions: | SMALL OUTLINE, S-PDSO-C5 |
| Number of stitches: | eight |
| Reach Compliance Code： | unknown |
| ECCN code: | EAR99 |
| Risk level: | one point seven |
| Samacsys Confidence： | four |
| Samacsys Status： | Released |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=1253642 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=1253642 |
| Samacsys PartID： | one million two hundred and fifty-three thousand six hundred and forty-two |
| Samacsys Image： | https://componentsearchengine.com/Images/9/SI7120ADN-T1-GE3.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/1/SI7120ADN-T1-GE3.jpg |
| Samacsys Pin Count： | eight |
| Samacsys Part Category： | MOSFET (N-Channel) |
| Samacsys Package Category： | Other |
| Samacsys Footprint Name： | PowerPAK? 1212-8 Single_2-2 |
| Samacsys Released Date： | 2019-11-13 14:03:06 |
| Is Samacsys： | N |
| Avalanche energy efficiency grade (Eas): | 24 mJ |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 60 V |
| Maximum drain current (ID): | 6 A |
| Maximum drain source on resistance: | 0.021 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code: | S-PDSO-C5 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | five |
| Operating mode: | ENHANCEMENT MODE |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | SQUARE |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | two hundred and sixty |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum pulse drain current (IDM): | 40 A |
| Certification status: | Not Qualified |
| Surface mounting: | YES |
| Terminal surface layer: | PURE MATTE TIN |
| Terminal type: | C BEND |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | thirty |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
