Functional circuit principle of each pin of S8050DTB pin definition pin diagram and functional IC traders - China IC Network - Core 37
Publish Purchase
Location: model: accurate
  • Batch RFQ
  •  
  • supplier
  • model
  • number
  • manufacturer
  • encapsulation
  • Batch No
  • Transaction description
  • inquiry
  •  
  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • S8050DTB
  • number -
  • manufactor -
  • encapsulation -
  • Batch No -
  • -
  •  QQ:2881495808 QQ:308365177
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
more
  •  S8050DTB diagram
  • Gather the core city

      This member has used this website for more than 13 years
  • S8050DTB
  • number 11770 
  • manufactor CHANGJIANG 
  • encapsulation  
  • Batch No Latest batch
  • Original factory and original company
  •  QQ:3008092965 QQ:3008092965
  • 0755-83239307  QQ:3008092965 QQ:3008092965
Direct train with order
S8050G-C-T92-B product parameters
model: S8050G-C-T92-B
Rohs certification or not: accord with
Lifecycle: Active
IHS Manufacturer: UNISONIC TECHNOLOGIES CO LTD
Part package code: TO-92
Packing instructions: HALOGEN FREE PACKAGE-3
Number of stitches: three
Reach Compliance Code: compliant
ECCN code: EAR99
HTS Code: 8541.29.00.75
Risk level: five point two six
Maximum collector current (IC): 0.7 A
Maximum collector emitter voltage: 20 V
to configure: SINGLE
Minimum DC current gain (hFE): one hundred and twenty
JEDEC-95 code: TO-92
JESD-30 code: O-PBCY-T3
Number of elements: one
Number of terminals: three
Maximum operating temperature: 150 °C
Packaging body material: PLASTIC/EPOXY
Package shape: ROUND
Packaging form: CYLINDRICAL
Peak reflux temperature (° C): NOT SPECIFIED
Polarity/Channel Type: NPN
Maximum power dissipation (Abs): 1 W
Certification status: Not Qualified
Subcategory: Other Transistors
Surface mounting: NO
Terminal type: THROUGH-HOLE
Terminal location: BOTTOM
Maximum time at peak reflux temperature: NOT SPECIFIED
Transistor applications: AMPLIFIER
Transistor element material: SILICON
Nominal transition frequency (fT): 100 MHz
Base Number Matches: one
  •  
  • supplier
  • model *
  • number *
  • manufacturer
  • encapsulation
  • Batch No
  • Transaction description
  • inquiry
Records selected for batch RFQ Selected zero 15 at most each time.