| model: | RTQ035P02FHATR |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Not Recommended |
| IHS Manufacturer: | ROHM CO LTD |
| Packing instructions: | SMALL OUTLINE, R-PDSO-G6 |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| Risk level: | seven point nine six |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 20 V |
| Maximum drain current (ID): | 3.5 A |
| Maximum drain source on resistance: | 0.07 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code: | R-PDSO-G6 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | six |
| Operating mode: | ENHANCEMENT MODE |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | P-CHANNEL |
| Maximum pulse drain current (IDM): | 14 A |
| Reference standards: | AEC-Q101 |
| Surface mounting: | YES |
| Terminal type: | GULL WING |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
|
