| model: | RQ3E120GNTB |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| Packing instructions: | HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| Factory Lead Time： | 16 weeks |
| Risk level: | one point six six |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 30 V |
| Maximum drain current (ID): | 12 A |
| Maximum drain source on resistance: | 0.0118 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code: | R-PDSO-F5 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | five |
| Operating mode: | ENHANCEMENT MODE |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum pulse drain current (IDM): | 48 A |
| Surface mounting: | YES |
| Terminal type: | FLAT |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
