RA30H2127M Schematic Diagram Functional Circuit Principle Chip Pin Definition Pin Diagram and Functions - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • RA30H2127M
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  •  QQ:2881495808 QQ:2881495808 copy
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  • Shenzhen Haoshijian Electronics Co., Ltd

      This member has used this website for more than 16 years
  • RA30H2127M  Spot stock
  • number 1025 
  • manufactor MITSUBISHI 
  • encapsulation H2S 
  • Batch No 16+ 
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  • Beijing Rochester Electronic Technology Co., Ltd

      This member has used this website for more than 18 years
  • RA30H2127M-101  Spot stock
  • number 1883 
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      This member has used this website for more than 9 years
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  • number 5000 
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  • Shenzhen Keyu Electronics Co., Ltd

      This member has used this website for more than 8 years
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  • number 9800 
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  • encapsulation H2S 
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  • Shenzhen Xinfulin Electronics Co., Ltd

      This member has used this website for more than 15 years
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  • number 98500 
  • manufactor MIT 
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  •  RA30H2127M diagram
  • Shenzhen Xinfulin Electronics Co., Ltd

      This member has used this website for more than 15 years
  • RA30H2127M
  • number 85000 
  • manufactor MITSUBISHI
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  • Batch No 23+ 
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  •  RA30H2127M1 drawing
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      This member has used this website for more than 13 years
  • RA30H2127M1
  • number 15578 
  • manufactor MITSUBISHI 
  • encapsulation H2S 
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  • Modern Core City (Shenzhen) Technology Co., Ltd

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  • number 56800 
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  • Shenzhen Dejie Core City Technology Co., Ltd

      This member has used this website for more than 11 years
  • RA30H2127M1
  • number 20 
  • manufactor MIT 
  • encapsulation NA/ 
  • Batch No 23+ 
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  •  RA30H2127M1 drawing
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      This member has used this website for more than 13 years
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  • number 15578 
  • manufactor MITSUBISHI 
  • encapsulation H2S 
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  • Shenzhen Sinuo Electronic Technology Co., Ltd

      This member has used this website for more than 8 years
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  • number 61089 
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  • Batch No 17+ 
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  • Shenzhen Jingyu Technology Co., Ltd

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  • number 18800 
  • manufactor MIT 
  • encapsulation TO-59. High frequency tube
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  • 80 Youchuang Group

      This member has used this website for more than 15 years
  • RA30H2127M
  • number 32560 
  • manufactor MITSUBISH 
  • encapsulation H2S 
  • Batch No 23+ 
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  • number 122 
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  • encapsulation MOUDLE 
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  • Shenzhen Yichuangteng Electronic Technology Co., Ltd

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  • number 1128 
  • manufactor MITSUBISHI 
  • encapsulation H2S 
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  • Shenzhen Qinsida Technology Co., Ltd

      This member has used this website for more than 14 years
  • RA30H2127M
  • number 100 
  • manufactor Mitsubishi
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  • Shanghai Yimiao Electronic Technology Co., Ltd

      This member has used this website for more than 14 years
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  • number 20000 
  • manufactor MIT 
  • encapsulation Module
  • Batch No 23+ 
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  • fifteen billion six hundred and eighteen million eight hundred and thirty-six thousand eight hundred and sixty-three  QQ:617677003
  •  RA30H2127M diagram
  • Shenzhen Xinda Technology Co., Ltd

      This member has used this website for more than 9 years
  • RA30H2127M
  • number 5000 
  • manufactor QORVO 
  • encapsulation SMD 
  • Batch No 2019+ 
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  • Shenzhen Longxin Chuangzhan Electronics Co., Ltd

      This member has used this website for more than 15 years
  • RA30H2127M1
  • number 30000 
  • manufactor ADI 
  • encapsulation SOP8 
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  • Wansan Technology (Shenzhen) Co., Ltd

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  • RA30H2127M-101
  • number 6500000 
  • manufactor Mitsubishi
  • encapsulation Original factory
  • Batch No 22+ 
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  • Shenzhen Huaxing Microelectronics Co., Ltd

      This member has used this website for more than 16 years
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  • number 5000 
  • manufactor MITSUBISHI 
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  • number 8500 
  • manufactor MITSUBISHI
  • encapsulation  
  • Batch No 22+ 
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  • Shenzhen Keyu Electronics Co., Ltd

      This member has used this website for more than 9 years
  • RA30H2127M
  • number 9800 
  • manufactor MIT 
  • encapsulation Original factory
  • Batch No 21+ 
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  • Huafuxin (Shenzhen) Intelligent Technology Co., Ltd

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  • RA30H2127M
  • number 15000 
  • manufactor MITSUBISHI
  • encapsulation  
  • Batch No 22+ 
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  • number 8800 
  • manufactor MIT 
  • encapsulation  
  • Batch No 20+ 
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  • Shenzhen First Line Semiconductor Co., Ltd

      This member has used this website for more than 11 years
  • RA30H2127M-101
  • number 15000 
  • manufactor Original brand
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  •  RA30H2127M diagram
  • Shenzhen First Line Semiconductor Co., Ltd

      This member has used this website for more than 16 years
  • RA30H2127M
  • number 1600 
  • manufactor MIT 
  • encapsulation Original factory
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  • New and original parts of the stock and other orders
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RA30H2127M product parameters
model: RA30H2127M
Lifecycle: Obsolete
Packing instructions: FLNG,2.4"H.SPACE
Reach Compliance Code: unknown
Risk level: five point eight one
Characteristic impedance: 50 Ω
Construction: COMPONENT
Maximum input power (CW): 20 dBm
Number of functions: one
Maximum operating frequency: 270 MHz
Minimum operating frequency: 210 MHz
Maximum operating temperature: 110 °C
Minimum operating temperature: -30 °C
Packaging body material: PLASTIC/EPOXY
Encapsulation equivalent code: FLNG,2.4"H.SPACE
Power Supply: 5,12.5 V
RF/microwave equipment type: NARROW BAND HIGH POWER
Subcategory: RF/Microwave Amplifiers
Technology: HYBRID
Maximum voltage standing wave ratio: three
Base Number Matches: one
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Records selected for batch RFQ Selected zero 15 at most each time.
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