| model: | QS8J2TR |
|
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | ROHM CO LTD |
| Packing instructions: | SMALL OUTLINE, R-PDSO-F8 |
| Number of stitches: | eight |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| Factory Lead Time： | 16 weeks |
| Risk level: | one point seven one |
| Samacsys Description： | QS8J2TR Dual P-Channel MOSFET, 4 A, 12 V QS8J2, 8-Pin TSMT ROHM |
| to configure: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 12 V |
| Maximum drain current (Abs) (ID): | 4 A |
| Maximum drain current (ID): | 4 A |
| Maximum drain source on resistance: | 0.036 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code: | R-PDSO-F8 |
| Humidity sensitivity level: | one |
| Number of elements: | two |
| Number of terminals: | eight |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | P-CHANNEL |
| Maximum power dissipation (Abs): | 1.5 W |
| Maximum pulse drain current (IDM): | 12 A |
| Certification status: | Not Qualified |
| Subcategory: | Other Transistors |
| Surface mounting: | YES |
| Terminal type: | FLAT |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
