model: | PSMN1R3-30YL |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Transferred |
Packing instructions: | PLASTIC, LFPAK-4 |
Number of stitches: | four |
Reach Compliance Code: | not_compliant |
ECCN code: | EAR99 |
Risk level: | five point seven |
Is Samacsys: | N |
Avalanche energy efficiency grade (Eas): | 383 mJ |
Enclosure connection: | DRAIN |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 30 V |
Maximum drain current (Abs) (ID): | 100 A |
Maximum drain current (ID): | 100 A |
Maximum drain source on resistance: | 0.00195 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | R-PSSO-G4 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | four |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 121 W |
Maximum pulse drain current (IDM): | 923 A |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface mounting: | YES |
Terminal surface layer: | Tin (Sn) |
Terminal type: | GULL WING |
Terminal location: | SINGLE |
Maximum time at peak reflux temperature: | thirty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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