model: | PESD3V3L4UF |
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Source Url Status Check Date: | 2013-06-14 00:00:00 |
Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Transferred |
IHS Manufacturer: | NXP SEMICONDUCTORS |
Part package code: | SON |
Packing instructions: | 1 X 1.45 MM, 0.50 MM HEIGHT, ULTRA SMALL, PLASTIC, MO-252, SMD, 6 PIN |
Number of stitches: | two hundred and fifty-two |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.10.00.50 |
Risk level: | five point five two |
Is Samacsys: | N |
Maximum breakdown voltage: | 5.88 V |
Minimum breakdown voltage: | 5.32 V |
Nominal value of breakdown voltage: | 5.6 V |
Maximum clamping voltage: | 12 V |
to configure: | COMMON ANODE, 4 ELEMENTS |
Diode element material: | SILICON |
Diode type: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95 code: | MO-252 |
JESD-30 code: | R-PBCC-N6 |
JESD-609 code: | e3 |
Humidity sensitivity level: | one |
Maximum nonrepeatable peak reverse power dissipation: | 30 W |
Number of elements: | four |
Number of terminals: | six |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | CHIP CARRIER |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity: | UNIDIRECTIONAL |
Certification status: | Not Qualified |
Maximum repetitive peak reverse voltage: | 3.3 V |
Subcategory: | Transient Suppressors |
Surface mounting: | YES |
Technology: | AVALANCHE |
Terminal surface layer: | Tin (Sn) |
Terminal type: | NO LEAD |
Terminal location: | BOTTOM |
Maximum time at peak reflux temperature: | thirty |
Base Number Matches: | one |
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