model: | P6SMB62ATR13 |
|
Lead free: | Lead |
Rohs certification or not: | Non conformance |
Lifecycle: | Active |
IHS Manufacturer: | CENTRAL SEMICONDUCTOR CORP |
Reach Compliance Code: | unknown |
ECCN code: | EAR99 |
HTS Code: | 8541.10.00.50 |
Risk level: | five point one three |
Maximum breakdown voltage: | 65.1 V |
Minimum breakdown voltage: | 58.9 V |
Nominal value of breakdown voltage: | 62 V |
Maximum clamping voltage: | 85 V |
to configure: | SINGLE |
Diode element material: | SILICON |
Diode type: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code: | R-PDSO-C2 |
JESD-609 code: | e0 |
Maximum nonrepeatable peak reverse power dissipation: | 600 W |
Number of elements: | one |
Number of terminals: | two |
Maximum operating temperature: | 150 °C |
Minimum operating temperature: | -65 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | NOT SPECIFIED |
Polarity: | UNIDIRECTIONAL |
Certification status: | Not Qualified |
Maximum repetitive peak reverse voltage: | 53 V |
Subcategory: | Transient Suppressors |
Surface mounting: | YES |
Technology: | AVALANCHE |
Terminal surface layer: | Tin/Lead (Sn/Pb) |
Terminal type: | C BEND |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
|