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Photonic chips and electronics device The co packaging of photonic chip and electronic device Technology integrated in the same package. It combines photonic chips and electrons device With the combination of the functions of, it realizes high-speed, high-density and low-power data transmission and processing. In the process of co packaging, the photonic chip and electronic device It needs to be positioned, connected and packaged through a series of process steps. The working principle of co packaging is to integrate the photonic chip and electronic device They are placed on the same packaging substrate and connected by micro welding or electroplating. Photonic chips are usually composed of light sources, light modulators, photodetectors and optical waveguides device Including processor, ADA4932-1YCPZ
Date: June 7, 2024 Reading: 747
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New inverter technology has made remarkable progress in recent years, mainly thanks to advanced power elements device And analog IC. These yuan device And IC not only improve the efficiency and performance of the inverter, but also reduce its size and cost. This article will discuss these advanced elements in detail device And analog IC and its application in new inverter. 1、 Advanced power unit device Advanced power unit device It is increasingly widely used in inverter technology, including insulated gate bipolar transistor (IGBT), metal oxide semiconductor field effect transistor (MOSFET), silicon carbide (SiC) and gallium nitride (GaN) device Etc. These power elements
Date: June 3, 2024 Reading: 742
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In recent years, with the rapid development of power electronics technology and increasing market demand, power semiconductors device It is increasingly important in various applications. In this context, Basic Semiconductor introduced a hybrid silicon carbide (SiC) discrete device IGBT (Hybrid Insulated Gate Bipolar Transistor) brings a new technology choice and application prospect for the industry. Technical background of hybrid IGBT IGBT as a power semiconductor device It combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) and bipolar transistor (BJT), and is widely used in inverters, A
Date: May 31, 2024 Reading: 739
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Thyristor is a semiconductor device , widely used in power electronic equipment. Thyristor is a current type device , not voltage type device 。 Distinguish between current mode and voltage mode device Their principles are mainly based on their working mechanism and the type of control input. The basic operating principle of the thyristor The thyristor is composed of four layers of semiconductor materials (P-N-P-N structure), with three PN junctions and three electrodes: anode, cathode and gate. When the anode is positive to the cathode, the thyristor is in the forward blocking state. At this time, even if the forward voltage is applied, FST3126MTCX crystal
Date: May 27, 2024 Reading: 734
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Gas discharge tube is an ancient element used for circuit protection device It uses the principle of gas discharge to protect the circuit from damage caused by excessive voltage. With the continuous progress of technology, this "ancient" yuan device It has found new applications in modern electronic and electrical systems and expanded its versatility. As "Smart Ai 4.0", I will analyze the working principle, historical development, multi-functional expansion, application cases and future development potential of gas discharge tubes. Working principle Gas discharge tube works by filling low-pressure gas between two electrodes. When the voltage in the circuit rises to a certain level, this low-pressure gas is ionized to form plasma and conduct electricity. This
Date: May 6, 2024 Reading: 707
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Wearable for clinical diagnosis of lung disease integrated with artificial intelligence algorithm device It is a kind of medical equipment combined with advanced technology. It uses artificial intelligence technology to analyze and diagnose patients' lung conditions, providing doctors with more accurate and rapid diagnosis results, while also monitoring patients' health status in real time, providing personalized nursing programs. This wearable device It usually includes the following components: 1 Sensor: used to collect physiological data of patients, such as respiratory rate, heart rate, blood oxygen saturation and other lung related indicators. 2. Processor: The processor with built-in artificial intelligence algorithm is responsible for analyzing and diagnosing the data collected by the DS89C387TMEA sensor, and outputting
Date: April 30, 2024 Reading: 706
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Silicon carbide (SiC) power device As a new semiconductor material, it has an important application prospect in the field of efficient energy conversion. Silicon carbide power is briefly introduced below device Its basic characteristics, advantages and application prospects in energy conversion. 1. Silicon carbide power device Basic characteristics of silicon carbide power device It is a kind of semiconductor based on silicon carbide materials device , common silicon carbide power device Including silicon carbide MOSFET (metal oxide semiconductor field effect transistor), silicon carbide Schottky diode, silicon carbide JFET (junction type field effect transistor), etc. these ones here device Compared with traditional CM8880PI silicon based power device Compared with, it has the following protrusions
Date: April 29, 2024 Reading: 703
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power device It refers to those electronic components specially designed to process and convert electric energy. They play a key role in electronic systems, especially in the fields of power electronics, aerospace, automotive industry, communication equipment, data centers and other high power demand fields. these ones here device They include but are not limited to transistors (such as MOSFETs, IGBTs, BJTs), EP3SE50F484I4N diodes, thyristors, power capacitors, resistors, etc. Their operating characteristics usually require high efficiency, large current, wide voltage range, and fast switching capability. Tanner L-Edit is a circuit simulation software provided by Synopsys
Date: April 28, 2024 Reading: 703
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Semiconductor technology refers to the manufacturing of semiconductors device And integrated circuits. These technologies are the core of semiconductor manufacturing, which determine the performance, power consumption, size and production cost of chips. The following is an overview of the main contents and steps of semiconductor process technology: 1. Design and simulation: before manufacturing, it is necessary to design circuit diagrams and layouts, and predict them through computer simulation device Performance. 2. Material preparation: usually based on silicon, single crystal silicon ingots are used to cut into wafers or wafers in the form of wafers. 3. Oxidation: grow a layer of silicon dioxide on the surface of silicon wafer, usually by exposing silicon wafer to oxygen or water vapor at high temperature
Date: April 28, 2024 Reading: 702
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Silicon Carbide (SiC) power device It is an important innovation in the field of power electronics technology. It is leading the power system to develop in an efficient, reliable and sustainable direction. With the growth of global demand for energy efficiency, electric vehicles, renewable energy and smart grids, SiC power device Because of its unique performance advantages, it is becoming the key driving force of industry change. 1、 Why silicon carbide? Silicon carbide, a wide band gap semiconductor material, its physical properties surpass the traditional silicon (Si) material in many aspects. The energy band width of SiC is up to 3.2eV, nearly three times that of silicon. This feature gives SiC device On high
Date: April 26, 2024 Reading: 700
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Goleta, California, USA, Hsinchu, Taiwan, China - April 25, 2024 - Transform, Inc. (NASDAQ: TGAN), the world's leading supplier of GaN power semiconductors, and Weltrand Semiconductor Inc. (Weiquan Electronics, TWSE: 2436), the global leader of integrated circuits for USB PD controllers, today announced the launch of two new types of system level packaging GaN device (SiP), together with the flagship GaN SiP of Weiquan Electronics launched last year, forms the first one based on Transporm Super
Date: April 25, 2024 Reading: 698
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Silicon Carbide device It is an electronic device made of silicon carbide as a semiconductor material device 。 Compared with traditional silicon device ，SiC device It has many advantages, including higher temperature resistance, higher operating frequency, higher breakdown voltage, lower conduction loss and better radiation anti-interference performance. SiC device It is widely used in various fields, including power electronics, photovoltaic inverter, power transmission and distribution system, new energy vehicle drive system, aircraft avionics, military equipment, etc. In the power electronics industry, SiC device It has been regarded as the next generation power semiconductor technology. They mainly include SiC
Date: April 18th, 2024 Reading: 691
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power device It is used to control power flow and conversion device Its main function is to realize the regulation, transformation and control of electric energy. power device It can be divided into switching power device And linear power device There are two categories, including CY7C199-15DMB transistor, FET, diode, rectifier, etc. In the energy storage system, power device It plays an important role and can affect the charging and discharging efficiency, capacity and service life of the energy storage system. Faced with the challenges of fast charging, large capacity and long life device Innovative applications in energy storage are mainly reflected in the following aspects: 1. High efficiency performance: for the demand of fast charging, power device High efficiency features are required to improve charging speed
Date: April 16, 2024 Reading: 687
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Electron element device Failure analysis technology refers to device Technical methods for systematic research and analysis of various faults and failures. In electronic equipment, various elements device For example, DS1685E-5 transistor, capacitor, resistor, etc. may have various problems, such as leakage, short circuit, aging and other faults, under long-term operation or special environment. Through failure analysis technology, it can help to determine the cause of failure, improve design and process, and improve product quality and reliability. Electron element device Failure analysis technology usually includes the following aspects: 1. Failure mode analysis: first, the failure element device Conduct visual inspection and test to determine the specific failure mode, such as short circuit
Date: April 12, 2024 Reading: 685
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With the rapid development of the electronic industry, the integration of the circuit board (PCB) is constantly improving, making the circuit more compact and efficient. However, this high integration also brings more challenges, especially in circuit protection. The protection circuit is the key to ensure the safe and stable operation of electronic products. Therefore, with the improvement of integration, different circuits are protected device Design must also keep pace with technology. The purpose of circuit protection is to prevent circuit damage caused by abnormal conditions such as overvoltage, overcurrent, overheating, etc. These protective measures can reduce the probability of equipment failure, extend the service life of the product, and ensure the safety of users. 1. Overvoltage protection: the circuit may be damaged by external
Date: April 10th, 2024 Reading: 681
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IGBT、 BJT and MOSFET are three kinds of power semiconductors commonly used in electronic engineering device 。 They are widely used in power electronics, drive control and other fields. Although these three components can be used in switching circuits and amplification circuits, their structures, working principles, performance characteristics and applications are different. Next, we will discuss the differences between these three components in detail. 1、 Structure difference IGBT: IGBT is a combination of the advantages of MOS transistor and bipolar transistor device 。 Its structure includes a silicon voltage controlled gate field effect transistor (MOSFET) and a bipolar transistor (BJT). triode...
Date: April 9, 2024 Reading: 680
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Power semiconductor discrete device It is an indispensable part of modern power electronic system, which undertakes the important task of controlling and converting electric energy. With the development of science and technology and the application of new materials, these semiconductors device The performance of has been greatly improved. This paper will discuss the power semiconductor separation device Their basic roles, their applications in the power field, and future development trends. 1. Introduction In the modern industrial and information age, electricity, as a clean and efficient energy, plays an increasingly prominent role in production and life. The heart of efficient power control and conversion - power semiconductor separation device , has become the core of power electronics technology. From the earliest silicon (Si) devices
Date: April 9, 2024 Reading: 679
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SiC power device It is a high performance power electron based on silicon carbide device 。 Compared with traditional silicon power device , SiC power device It has higher operating temperature, lower conduction and switching losses, higher switching speed and higher frequency characteristics. This makes SiC power device It has broad application prospects in high-temperature, high-power and high-frequency applications, such as electric vehicles, DMMT3906W-7-F solar inverters, power electronic converters, etc. To increase SiC power device The following methods and technologies can be adopted for the performance and reliability of: 1 Material optimization: SiC power device The performance and reliability of
Date: April 7, 2024 Reading: 677
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Silicon carbide (SiC) power device It is a new type of semiconductor device , considered as a catalyst for energy efficiency innovation. Conventional silicon (Si) power device There are some limitations in high temperature, high frequency, high voltage, high current and other applications, while DS2114Z silicon carbide power device With its superior electrical and thermal characteristics, it plays an important role in improving energy conversion efficiency, reducing system loss, and reducing volume and weight. The following is the power of silicon carbide device Key advantages and application prospects in energy efficiency innovation: 1 Ultra high operating temperature: silicon carbide power device It has extremely high thermal stability and operating temperature range, far exceeding traditional silicon device 。 This makes it stable in high temperature environment
Date: April 2, 2024 Reading: 674
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Silicon carbide power device Is an important semiconductor device , has many excellent characteristics, and plays a vital role in the innovation of future energy and power electronics technology. The following is about silicon carbide power device Details of: 1 Silicon carbide power device Introduction: - Silicon carbide (SiC) is a wide band gap semiconductor material with the characteristics of DS1685E-5, such as high thermal stability, high electron drift rate and high breakdown field strength. It is suitable for high-temperature, high-frequency and high-pressure environments. 2. Silicon carbide power device Type: - Main SiC power device Including SiC metal oxide semiconductor field effect transistor (MOSFET), SiC breakdown II
Date: March 21, 2024 Reading: 661
