Photonic integrated circuits (PICs) are integrated technologies that allow optical signals to FDD8647L On chip transmission and processing. Compared with traditional electronic chips, optoelectronic integrated chips have significant advantages in data transmission speed, bandwidth, energy consumption and anti-interference. They are widely used in communications, data centers, biomedical imaging, sensors, quantum computing and other fields. The material selection of optoelectronic integrated chips has a decisive impact on their performance. The following are the main optoelectronic integrated chip materials and their characteristics:
1. Silicon based materials
Silicon is one of the most commonly used substrates for optoelectronic integrated chips, which can be produced on a large scale and at a low cost, mainly because it is compatible with the existing CMOS (complementary metal oxide semiconductor) process. Silicon based optoelectronic integrated chips are commonly called Silicon Photonics, which make use of the good transmissibility of silicon in the infrared wavelength range and are suitable for the manufacturing of optical waveguides, modulators, detectors and other devices. However, silicon is an indirect band gap semiconductor, which limits its application in lasers.
2. III-V Compound Materials
Three and five group compounds, such as gallium arsenide (GaAs), indium phosphide (InP), indium antimonide (InSb), are famous for their direct band gap characteristics and excellent electronic mobility, and are ideal for manufacturing lasers, optical amplifiers and high-speed optical modulators. These materials can operate in a wider range of wavelengths, including those that are opaque to silicon. However, the cost of three or five family materials is high, and their compatibility with standard CMOS processes is poor.
3. Silicon based composite materials
In order to combine the high integration advantage of silicon and the excellent optical properties of three and five group compounds, researchers have developed a silicon based hybrid integration technology. This technology integrates the three and five group compound films onto the silicon photonics platform, realizing the integration of high-performance lasers and optical amplifiers on silicon chips. This hybrid integration scheme provides a new possibility for the functional expansion of optoelectronic integrated chips.
4. Other materials
In addition to the above materials, there are other materials that show potential in specific applications, including:
● Silicon nitride (Si3N4): It has transmission characteristics of low loss and wide wavelength range, and is suitable for manufacturing high Q value resonators and low loss waveguides.
● Polymers: provide flexible material selection and waveguide manufacturing methods, suitable for low-cost optical waveguide and optical interconnection applications.
● Graphene: With unique photoelectric characteristics, such as high electron mobility and adjustable light absorption, it is suitable for light modulators and photodetectors.
conclusion
The key to the selection of optoelectronic integrated chip materials lies in their application requirements, including operating wavelength, integration technology, performance requirements and cost considerations. Silicon based materials are widely used due to their compatibility with CMOS processes, while the three and five group compounds are used in high-performance device manufacturing due to their excellent optical properties. With the continuous development of optoelectronic integration technology, the emergence of more new materials and hybrid integration schemes is expected to break through the limitations of existing technologies and promote the development of optoelectronic integrated chips to higher performance and wider applications.
