| model: | L9D112G80BG4E10 |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Contact Manufacturer |
| Part package code: | DMA |
| Packing instructions: | BGA, BGA219,16X16,50 |
| Number of stitches: | two hundred and nineteen |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8542.32.00.24 |
| Risk level: | five point six nine |
| Access mode: | FOUR BANK PAGE BURST |
| Maximum access time: | 0.8 ns |
| Other features: | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK): | 100 MHz |
| I/O type: | COMMON |
| Interlaced burst length: | 2,4,8 |
| JESD-30 code: | S-XDMA-N219 |
| Length: | 25 mm |
| Memory density: | 268435456 bit |
| Memory IC type: | DDR DRAM MODULE |
| Memory width: | sixteen |
| Number of functions: | one |
| Number of ports: | one |
| Number of terminals: | two hundred and nineteen |
| Number of words: | 16777216 words |
| Word number code: | sixteen million |
| Operating mode: | SYNCHRONOUS |
| Maximum operating temperature: | 105 °C |
| Minimum operating temperature: | -40 °C |
| Organization: | 16MX16 |
| Output characteristics: | 3-STATE |
| Packaging body material: | UNSPECIFIED |
| Encapsulation code: | BGA |
| Encapsulation equivalent code: | BGA219,16X16,50 |
| Package shape: | SQUARE |
| Packaging form: | MICROELECTRONIC ASSEMBLY |
| Power Supply: | 2.5 V |
| Certification status: | Not Qualified |
| Refresh cycle: | eight thousand one hundred and ninety-two |
| Maximum height of seating surface: | 2.5 mm |
| Self refresh: | YES |
| Continuous burst length: | 2,4,8 |
| Maximum standby current: | 0.025 A |
| Subcategory: | DRAMs |
| Maximum slewing rate: | 1.7 mA |
| Maximum supply voltage (Vsup): | 2.7 V |
| Minimum supply voltage (Vsup): | 2.3 V |
| Nominal supply voltage (Vsup): | 2.5 V |
| Surface mounting: | NO |
| Technology: | CMOS |
| Temperature class: | INDUSTRIAL |
| Terminal type: | NO LEAD |
| Terminal pitch: | 1.27 mm |
| Terminal location: | DUAL |
| Width: | 25 mm |
| Base Number Matches： | one |
|
