model: | K9F5608R0D-JIB0 |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
Packing instructions: | FBGA, BGA63,10X12,32 |
Reach Compliance Code: | unknown |
Risk level: | five point eight three |
Maximum access time: | 35 ns |
Command user interface: | YES |
Data polling: | NO |
JESD-30 code: | R-PBGA-B63 |
JESD-609 code: | e3 |
Memory density: | 268435456 bit |
Memory IC type: | FLASH |
Memory width: | eight |
Humidity sensitivity level: | one |
Number/scale of departments: | 2K |
Number of terminals: | sixty-three |
Number of words: | 33554432 words |
Word number code: | thirty-two million |
Maximum operating temperature: | 85 °C |
Minimum operating temperature: | -40 °C |
Organization: | 32MX8 |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | FBGA |
Encapsulation equivalent code: | BGA63,10X12,32 |
Package shape: | RECTANGULAR |
Packaging form: | GRID ARRAY, FINE PITCH |
Page size: | 512 words |
Parallel/serial: | PARALLEL |
Peak reflux temperature (° C): | two hundred and twenty-five |
Power Supply: | 1.8 V |
Certification status: | Not Qualified |
Ready/Busy: | YES |
Department size: | 16K |
Maximum standby current: | 0.00005 A |
Subcategory: | Flash Memories |
Maximum slewing rate: | 0.02 mA |
Nominal supply voltage (Vsup): | 1.8 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | INDUSTRIAL |
Terminal surface layer: | Matte Tin (Sn) |
Terminal type: | BALL |
Terminal pitch: | 0.8 mm |
Terminal location: | BOTTOM |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Switch bit: | NO |
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