model: | K9F1G08U0D-HCB00 |
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Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
Part package code: | BGA |
Packing instructions: | 9 X 11 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63 |
Number of stitches: | sixty-three |
Reach Compliance Code: | unknown |
ECCN code: | 3A991.B.1.A |
HTS Code: | 8542.32.00.51 |
Risk level: | five point eight four |
Maximum access time: | 20 ns |
Other features: | CONTAINS ADDITIONAL 32M BIT NAND FLASH |
Command user interface: | YES |
Data polling: | NO |
JESD-30 code: | R-PBGA-B63 |
Length: | 11 mm |
Memory density: | 1073741824 bit |
Memory IC type: | FLASH |
Memory width: | eight |
Number of functions: | one |
Number/scale of departments: | 1K |
Number of terminals: | sixty-three |
Number of words: | 134217728 words |
Word number code: | one hundred and twenty-eight million |
Operating mode: | ASYNCHRONOUS |
Maximum operating temperature: | 70 °C |
Minimum operating temperature: | |
Organization: | 128MX8 |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | VFBGA |
Encapsulation equivalent code: | BGA63,10X12,32 |
Package shape: | RECTANGULAR |
Packaging form: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Page size: | 2K words |
Parallel/serial: | PARALLEL |
Power Supply: | 3/3.3 V |
Programming voltage: | 2.7 V |
Certification status: | Not Qualified |
Ready/Busy: | YES |
Maximum height of seating surface: | 1 mm |
Department size: | 128K |
Maximum standby current: | 0.00008 A |
Subcategory: | Flash Memories |
Maximum slewing rate: | 0.035 mA |
Maximum supply voltage (Vsup): | 3.6 V |
Minimum supply voltage (Vsup): | 2.7 V |
Nominal supply voltage (Vsup): | 3.3 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | COMMERCIAL |
Terminal type: | BALL |
Terminal pitch: | 0.8 mm |
Terminal location: | BOTTOM |
Switch bit: | NO |
Type: | SLC NAND TYPE |
Width: | 9 mm |
Base Number Matches: | one |
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