| model: | K6F4016R4E-EF70 |
|
| Rohs certification or not: | Non conformance |
| Lifecycle: | Obsolete |
| IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
| Part package code: | BGA |
| Packing instructions: | VFBGA, BGA48,6X8,30 |
| Number of stitches: | forty-eight |
| Reach Compliance Code： | compliant |
| ECCN code: | 3A991.B.2.A |
| HTS Code: | 8542.32.00.41 |
| Risk level: | five point nine |
| Is Samacsys： | N |
| Maximum access time: | 70 ns |
| I/O type: | COMMON |
| JESD-30 code: | R-PBGA-B48 |
| JESD-609 code: | e0 |
| Length: | 7 mm |
| Memory density: | 4194304 bit |
| Memory IC type: | STANDARD SRAM |
| Memory width: | sixteen |
| Number of functions: | one |
| Number of terminals: | forty-eight |
| Number of words: | 262144 words |
| Word number code: | two hundred and fifty-six thousand |
| Operating mode: | ASYNCHRONOUS |
| Maximum operating temperature: | 85 °C |
| Minimum operating temperature: | -40 °C |
| Organization: | 256KX16 |
| Output characteristics: | 3-STATE |
| Packaging body material: | PLASTIC/EPOXY |
| Encapsulation code: | VFBGA |
| Encapsulation equivalent code: | BGA48,6X8,30 |
| Package shape: | RECTANGULAR |
| Packaging form: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Parallel/serial: | PARALLEL |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Power Supply: | 1.8/2 V |
| Certification status: | Not Qualified |
| Maximum height of seating surface: | 1 mm |
| Minimum standby current: | 1.5 V |
| Subcategory: | SRAMs |
| Maximum slewing rate: | 0.017 mA |
| Maximum supply voltage (Vsup): | 2.2 V |
| Minimum supply voltage (Vsup): | 1.65 V |
| Nominal supply voltage (Vsup): | 1.8 V |
| Surface mounting: | YES |
| Technology: | CMOS |
| Temperature class: | INDUSTRIAL |
| Terminal surface layer: | Tin/Lead (Sn/Pb) |
| Terminal type: | BALL |
| Terminal pitch: | 0.75 mm |
| Terminal location: | BOTTOM |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Width: | 6 mm |
| Base Number Matches： | one |
|
