model: | K4X51163PC-FEC3 |
|
Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
Packing instructions: | FBGA, BGA60,9X10,32 |
Reach Compliance Code: | unknown |
Risk level: | five point eight four |
Maximum access time: | 6 ns |
Maximum clock frequency (fCLK): | 133 MHz |
I/O type: | COMMON |
Interlaced burst length: | 2,4,8,16 |
JESD-30 code: | R-PBGA-B60 |
JESD-609 code: | e3 |
Memory density: | 536870912 bit |
Memory IC type: | DDR DRAM |
Memory width: | sixteen |
Humidity sensitivity level: | one |
Number of terminals: | sixty |
Number of words: | 33554432 words |
Word number code: | thirty-two million |
Maximum operating temperature: | 85 °C |
Minimum operating temperature: | -25 °C |
Organization: | 32MX16 |
Output characteristics: | 3-STATE |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | FBGA |
Encapsulation equivalent code: | BGA60,9X10,32 |
Package shape: | RECTANGULAR |
Packaging form: | GRID ARRAY, FINE PITCH |
Peak reflux temperature (° C): | two hundred and twenty-five |
Power Supply: | 1.8 V |
Certification status: | Not Qualified |
Refresh cycle: | eight thousand one hundred and ninety-two |
Continuous burst length: | 2,4,8,16 |
Maximum standby current: | 0.0003 A |
Subcategory: | DRAMs |
Maximum slewing rate: | 0.15 mA |
Nominal supply voltage (Vsup): | 1.8 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | OTHER |
Terminal surface layer: | MATTE TIN |
Terminal type: | BALL |
Terminal pitch: | 0.8 mm |
Terminal location: | BOTTOM |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Base Number Matches: | one |
|