model: | K4T51083QG-HCE6 |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
Packing instructions: | FBGA, BGA60,9X11,32 |
Reach Compliance Code: | compliant |
Risk level: | five point eight three |
Maximum access time: | 0.45 ns |
Maximum clock frequency (fCLK): | 333 MHz |
I/O type: | COMMON |
Interlaced burst length: | 4,8 |
JESD-30 code: | R-PBGA-B60 |
JESD-609 code: | e1 |
Memory density: | 536870912 bit |
Memory IC type: | DDR DRAM |
Memory width: | eight |
Humidity sensitivity level: | three |
Number of terminals: | sixty |
Number of words: | 67108864 words |
Word number code: | sixty-four million |
Maximum operating temperature: | 95 °C |
Minimum operating temperature: | |
Organization: | 64MX8 |
Output characteristics: | 3-STATE |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | FBGA |
Encapsulation equivalent code: | BGA60,9X11,32 |
Package shape: | RECTANGULAR |
Packaging form: | GRID ARRAY, FINE PITCH |
Peak reflux temperature (° C): | two hundred and sixty |
Power Supply: | 1.8 V |
Certification status: | Not Qualified |
Refresh cycle: | eight thousand one hundred and ninety-two |
Continuous burst length: | 4,8 |
Maximum standby current: | 0.008 A |
Subcategory: | DRAMs |
Maximum slewing rate: | 0.175 mA |
Nominal supply voltage (Vsup): | 1.8 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | OTHER |
Terminal surface layer: | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal type: | BALL |
Terminal pitch: | 0.8 mm |
Terminal location: | BOTTOM |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Base Number Matches: | one |
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