model: | K4T1G164QE-HCF8 |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
Packing instructions: | TFBGA, BGA84,9X15,32 |
Reach Compliance Code: | unknown |
Risk level: | five point eight |
Access mode: | MULTI BANK PAGE BURST |
Maximum access time: | 0.35 ns |
Other features: | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK): | 533 MHz |
I/O type: | COMMON |
Interlaced burst length: | 4,8 |
JESD-30 code: | R-PBGA-B84 |
JESD-609 code: | e1 |
Length: | 12.5 mm |
Memory density: | 1073741824 bit |
Memory IC type: | DDR DRAM |
Memory width: | sixteen |
Humidity sensitivity level: | three |
Number of functions: | one |
Number of ports: | one |
Number of terminals: | eighty-four |
Number of words: | 67108864 words |
Word number code: | sixty-four million |
Operating mode: | SYNCHRONOUS |
Maximum operating temperature: | 85 °C |
Minimum operating temperature: | |
Organization: | 64MX16 |
Output characteristics: | 3-STATE |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | TFBGA |
Encapsulation equivalent code: | BGA84,9X15,32 |
Package shape: | RECTANGULAR |
Packaging form: | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak reflux temperature (° C): | two hundred and sixty |
Power Supply: | 1.8 V |
Certification status: | Not Qualified |
Refresh cycle: | eight thousand one hundred and ninety-two |
Maximum height of seating surface: | 1.2 mm |
Self refresh: | YES |
Continuous burst length: | 4,8 |
Maximum standby current: | 0.015 A |
Subcategory: | DRAMs |
Maximum slewing rate: | 0.215 mA |
Maximum supply voltage (Vsup): | 1.9 V |
Minimum supply voltage (Vsup): | 1.7 V |
Nominal supply voltage (Vsup): | 1.8 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | OTHER |
Terminal surface layer: | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal type: | BALL |
Terminal pitch: | 0.8 mm |
Terminal location: | BOTTOM |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Width: | 7.5 mm |
Base Number Matches: | one |
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