| model: | K4S641632D-TC1LT |
|
| Rohs certification or not: | Non conformance |
| Lifecycle: | Obsolete |
| IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
| Packing instructions: | TSOP, TSOP54,.46,32 |
| Reach Compliance Code： | unknown |
| Risk level: | five point nine two |
| Maximum access time: | 6 ns |
| Maximum clock frequency (fCLK): | 100 MHz |
| I/O type: | COMMON |
| Interlaced burst length: | 1,2,4,8 |
| JESD-30 code: | R-PDSO-G54 |
| JESD-609 code: | e0 |
| Memory density: | 67108864 bit |
| Memory IC type: | SYNCHRONOUS DRAM |
| Memory width: | sixteen |
| Number of terminals: | fifty-four |
| Number of words: | 4194304 words |
| Word number code: | four million |
| Maximum operating temperature: | 70 °C |
| Minimum operating temperature: | |
| Organization: | 4MX16 |
| Output characteristics: | 3-STATE |
| Packaging body material: | PLASTIC/EPOXY |
| Encapsulation code: | TSOP |
| Encapsulation equivalent code: | TSOP54,.46,32 |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE, THIN PROFILE |
| Power Supply: | 3.3 V |
| Certification status: | Not Qualified |
| Refresh cycle: | four thousand and ninety-six |
| Continuous burst length: | 1,2,4,8,FP |
| Maximum standby current: | 0.001 A |
| Subcategory: | DRAMs |
| Maximum slewing rate: | 0.125 mA |
| Nominal supply voltage (Vsup): | 3.3 V |
| Surface mounting: | YES |
| Technology: | CMOS |
| Temperature class: | COMMERCIAL |
| Terminal surface layer: | Tin/Lead (Sn/Pb) |
| Terminal type: | GULL WING |
| Terminal pitch: | 0.8 mm |
| Terminal location: | DUAL |
|
