K4S511633F-PC75 Chinese Information Application Article Market Situation Hot Spot Use Introduction - China IC Network - Core 37
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  • Shenzhen Xinfulin Electronics Co., Ltd

         This member has used this website for more than 15 years

  • K4S511633F-PC75
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  •  QQ:2881495808 QQ:308365177
  • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven  QQ:2881495808 QQ:308365177
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  •  K4S511633F-PC75 drawing
  • Shenzhen First Line Semiconductor Co., Ltd

      This member has used this website for more than 15 years
  • K4S511633F-PC75
  • number 28000 
  • manufactor Original brand
  • encapsulation Original factory appearance
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  • New and original parts of the stock and other orders
  •  QQ:2881493920 QQ:2881493921
  • 0755-88608801 multi line  QQ:2881493920 QQ:2881493921
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K4S511633F-PF1L product parameters
model: K4S511633F-PF1L
Rohs certification or not: accord with
Lifecycle: Active
IHS Manufacturer: SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code: compliant
Risk level: five point eight four
Maximum access time: 7 ns
Maximum clock frequency (fCLK): 111 MHz
I/O type: COMMON
Interlaced burst length: 1,2,4,8
JESD-30 code: S-PBGA-B54
Memory density: 536870912 bit
Memory IC type: SYNCHRONOUS DRAM
Memory width: sixteen
Number of terminals: fifty-four
Number of words: 33554432 words
Word number code: thirty-two million
Maximum operating temperature: 70 °C
Minimum operating temperature: -25 °C
Organization: 32MX16
Output characteristics: 3-STATE
Packaging body material: PLASTIC/EPOXY
Encapsulation code: FBGA
Encapsulation equivalent code: BGA54,9X9,32
Package shape: SQUARE
Packaging form: GRID ARRAY, FINE PITCH
Power Supply: 3/3.3 V
Certification status: Not Qualified
Refresh cycle: eight thousand one hundred and ninety-two
Continuous burst length: 1,2,4,8,FP
Maximum standby current: 0.001 A
Subcategory: DRAMs
Maximum slewing rate: 0.24 mA
Surface mounting: YES
Technology: CMOS
Temperature class: OTHER
Terminal type: BALL
Terminal pitch: 0.8 mm
Terminal location: BOTTOM
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