| model: | K4N51163QE-ZC25 |
|
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Obsolete |
| IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
| Packing instructions: | FBGA, BGA84,9X15,32 |
| Reach Compliance Code： | compliant |
| Risk level: | five point eight |
| Maximum access time: | 0.4 ns |
| Maximum clock frequency (fCLK): | 400 MHz |
| I/O type: | COMMON |
| Interlaced burst length: | 4,8 |
| JESD-30 code: | R-PBGA-B84 |
| Memory density: | 536870912 bit |
| Memory IC type: | CACHE DRAM MODULE |
| Memory width: | sixteen |
| Humidity sensitivity level: | three |
| Number of terminals: | eighty-four |
| Number of words: | 33554432 words |
| Word number code: | thirty-two million |
| Maximum operating temperature: | 85 °C |
| Minimum operating temperature: | |
| Organization: | 32MX16 |
| Output characteristics: | 3-STATE |
| Packaging body material: | PLASTIC/EPOXY |
| Encapsulation code: | FBGA |
| Encapsulation equivalent code: | BGA84,9X15,32 |
| Package shape: | RECTANGULAR |
| Packaging form: | GRID ARRAY, FINE PITCH |
| Peak reflux temperature (° C): | two hundred and sixty |
| Power Supply: | 1.8 V |
| Certification status: | Not Qualified |
| Refresh cycle: | eight thousand one hundred and ninety-two |
| Continuous burst length: | 4,8 |
| Maximum standby current: | 0.008 A |
| Subcategory: | DRAMs |
| Maximum slewing rate: | 0.28 mA |
| Nominal supply voltage (Vsup): | 1.8 V |
| Surface mounting: | YES |
| Technology: | CMOS |
| Temperature class: | OTHER |
| Terminal type: | BALL |
| Terminal pitch: | 0.8 mm |
| Terminal location: | BOTTOM |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Base Number Matches： | one |
|
