| model: | K4H561638F-UCB3 |
|
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Obsolete |
| Packing instructions: | TSSOP, TSSOP66,.46 |
| Reach Compliance Code： | unknown |
| Risk level: | five point two four |
| Maximum clock frequency (fCLK): | 166 MHz |
| I/O type: | COMMON |
| Interlaced burst length: | 2,4,8 |
| JESD-30 code: | R-PDSO-G66 |
| JESD-609 code: | e6 |
| Memory density: | 268435456 bit |
| Memory IC type: | DDR DRAM |
| Memory width: | sixteen |
| Humidity sensitivity level: | three |
| Number of terminals: | sixty-six |
| Number of words: | 16777216 words |
| Word number code: | sixteen million |
| Maximum operating temperature: | 70 °C |
| Minimum operating temperature: | |
| Organization: | 16MX16 |
| Output characteristics: | 3-STATE |
| Packaging body material: | PLASTIC/EPOXY |
| Encapsulation code: | TSSOP |
| Encapsulation equivalent code: | TSSOP66,.46 |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Peak reflux temperature (° C): | two hundred and sixty |
| Power Supply: | 2.5 V |
| Certification status: | Not Qualified |
| Refresh cycle: | eight thousand one hundred and ninety-two |
| Continuous burst length: | 2,4,8 |
| Subcategory: | DRAMs |
| Maximum slewing rate: | 0.35 mA |
| Nominal supply voltage (Vsup): | 2.5 V |
| Surface mounting: | YES |
| Technology: | CMOS |
| Temperature class: | COMMERCIAL |
| Terminal surface layer: | Tin/Bismuth (Sn/Bi) |
| Terminal type: | GULL WING |
| Terminal pitch: | 0.635 mm |
| Terminal location: | DUAL |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Base Number Matches： | one |
|
