model: | K4H510838J-LCCC0 |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
Part package code: | TSOP2 |
Packing instructions: | TSOP2, TSSOP66,.46 |
Number of stitches: | sixty-six |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8542.32.00.28 |
Risk level: | five point eight two |
Access mode: | FOUR BANK PAGE BURST |
Maximum access time: | 0.65 ns |
Other features: | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK): | 200 MHz |
I/O type: | COMMON |
Interlaced burst length: | 2,4,8 |
JESD-30 code: | R-PDSO-G66 |
Length: | 22.22 mm |
Memory density: | 536870912 bit |
Memory IC type: | DDR DRAM |
Memory width: | eight |
Number of functions: | one |
Number of ports: | one |
Number of terminals: | sixty-six |
Number of words: | 67108864 words |
Word number code: | sixty-four million |
Operating mode: | SYNCHRONOUS |
Maximum operating temperature: | 70 °C |
Minimum operating temperature: | |
Organization: | 64MX8 |
Output characteristics: | 3-STATE |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | TSOP2 |
Encapsulation equivalent code: | TSSOP66,.46 |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE, THIN PROFILE |
Peak reflux temperature (° C): | NOT SPECIFIED |
Power Supply: | 2.5 V |
Certification status: | Not Qualified |
Refresh cycle: | eight thousand one hundred and ninety-two |
Maximum height of seating surface: | 1.2 mm |
Self refresh: | YES |
Continuous burst length: | 2,4,8 |
Maximum standby current: | 0.005 A |
Subcategory: | DRAMs |
Maximum slewing rate: | 0.2 mA |
Maximum supply voltage (Vsup): | 2.7 V |
Minimum supply voltage (Vsup): | 2.3 V |
Nominal supply voltage (Vsup): | 2.5 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | COMMERCIAL |
Terminal type: | GULL WING |
Terminal pitch: | 0.65 mm |
Terminal location: | DUAL |
Maximum time at peak reflux temperature: | NOT SPECIFIED |
Width: | 10.16 mm |
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