| model: | K4D551638D-LC2A0 |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Obsolete |
| IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
| Part package code: | TSOP2 |
| Packing instructions: | TSOP2, TSSOP66,.46 |
| Number of stitches: | sixty-six |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8542.32.00.24 |
| Risk level: | five point eight four |
| Is Samacsys： | N |
| Access mode: | FOUR BANK PAGE BURST |
| Maximum access time: | 0.6 ns |
| Other features: | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK): | 350 MHz |
| I/O type: | COMMON |
| Interlaced burst length: | 2,4,8 |
| JESD-30 code: | R-PDSO-G66 |
| Length: | 22.22 mm |
| Memory density: | 268435456 bit |
| Memory IC type: | DDR DRAM |
| Memory width: | sixteen |
| Number of functions: | one |
| Number of ports: | one |
| Number of terminals: | sixty-six |
| Number of words: | 16777216 words |
| Word number code: | sixteen million |
| Operating mode: | SYNCHRONOUS |
| Maximum operating temperature: | 65 °C |
| Minimum operating temperature: | |
| Organization: | 16MX16 |
| Output characteristics: | 3-STATE |
| Packaging body material: | PLASTIC/EPOXY |
| Encapsulation code: | TSOP2 |
| Encapsulation equivalent code: | TSSOP66,.46 |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE, THIN PROFILE |
| Power Supply: | 2.8 V |
| Certification status: | Not Qualified |
| Refresh cycle: | four thousand and ninety-six |
| Maximum height of seating surface: | 1.2 mm |
| Self refresh: | YES |
| Continuous burst length: | 2,4,8 |
| Maximum standby current: | 0.07 A |
| Subcategory: | DRAMs |
| Maximum supply voltage (Vsup): | 2.9 V |
| Minimum supply voltage (Vsup): | 2.7 V |
| Nominal supply voltage (Vsup): | 2.8 V |
| Surface mounting: | YES |
| Technology: | CMOS |
| Temperature class: | COMMERCIAL |
| Terminal type: | GULL WING |
| Terminal pitch: | 0.65 mm |
| Terminal location: | DUAL |
| Width: | 10.16 mm |
| Base Number Matches： | one |
|
