K4D263238F-UC50T00 New Original Schematic Diagram Functional Circuit Principle of Each Pin Chip Pin Definition - China IC Network - Core 37
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    • Shenzhen Xinfulin Electronics Co., Ltd

           This member has used this website for more than 15 years

    • K4D263238F-UC50T00
    • number -
    • manufactor -
    • encapsulation -
    • Batch No -
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    • QQ:2881495808 QQ:308365177
    • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven QQ:2881495808 QQ:308365177
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    • K4D263238F-UC50T00 drawing

    • Shenzhen First Line Semiconductor Co., Ltd

        This member has used this website for more than 11 years
    • K4D263238F-UC50T00
    • number 28000 
    • manufactor Original brand
    • encapsulation Original factory appearance
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    • New and original parts of the stock and other orders
    • QQ:2881493920 QQ:2881493921
    • 0755-88608801 multi line QQ:2881493920 QQ:2881493921
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    K4D263238G-GC2A product parameters
    model: K4D263238G-GC2A
    Rohs certification or not: Non conformance
    Lifecycle: Obsolete
    IHS Manufacturer: SAMSUNG SEMICONDUCTOR INC
    Packing instructions: FBGA, BGA144,12X12,32
    Reach Compliance Code： unknown
    Risk level: five point nine two
    Maximum access time: 0.55 ns
    Maximum clock frequency (fCLK): 350 MHz
    I/O type: COMMON
    Interlaced burst length: 2,4,8
    JESD-30 code: S-PBGA-B144
    JESD-609 code: e0
    Memory density: 134217728 bit
    Memory IC type: DDR DRAM
    Memory width: thirty-two
    Number of terminals: one hundred and forty-four
    Number of words: 4194304 words
    Word number code: four million
    Maximum operating temperature: 65 °C
    Minimum operating temperature:
    Organization: 4MX32
    Output characteristics: 3-STATE
    Packaging body material: PLASTIC/EPOXY
    Encapsulation code: FBGA
    Encapsulation equivalent code: BGA144,12X12,32
    Package shape: SQUARE
    Packaging form: GRID ARRAY, FINE PITCH
    Power Supply: 2.5 V
    Certification status: Not Qualified
    Refresh cycle: four thousand and ninety-six
    Continuous burst length: 2,4,8
    Maximum standby current: 0.015 A
    Subcategory: DRAMs
    Maximum slewing rate: 0.465 mA
    Nominal supply voltage (Vsup): 2.5 V
    Surface mounting: YES
    Technology: CMOS
    Temperature class: COMMERCIAL
    Terminal surface layer: Tin/Lead (Sn/Pb)
    Terminal type: BALL
    Terminal pitch: 0.8 mm
    Terminal location: BOTTOM
    Base Number Matches： one
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