model: | K4D263238E-GC36 |
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Rohs certification or not: | Non conformance |
Lifecycle: | Obsolete |
IHS Manufacturer: | SAMSUNG SEMICONDUCTOR INC |
Part package code: | BGA |
Packing instructions: | LFBGA, BGA144,12X12,32 |
Number of stitches: | one hundred and forty-four |
Reach Compliance Code: | unknown |
ECCN code: | EAR99 |
HTS Code: | 8542.32.00.02 |
Risk level: | five point nine |
Is Samacsys: | N |
Access mode: | FOUR BANK PAGE BURST |
Maximum access time: | 0.6 ns |
Other features: | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK): | 275 MHz |
I/O type: | COMMON |
Interlaced burst length: | 2,4,8 |
JESD-30 code: | S-PBGA-B144 |
JESD-609 code: | e0 |
Length: | 12 mm |
Memory density: | 134217728 bit |
Memory IC type: | DDR DRAM |
Memory width: | thirty-two |
Number of functions: | one |
Number of ports: | one |
Number of terminals: | one hundred and forty-four |
Number of words: | 4194304 words |
Word number code: | four million |
Operating mode: | SYNCHRONOUS |
Maximum operating temperature: | 65 °C |
Minimum operating temperature: | |
Organization: | 4MX32 |
Output characteristics: | 3-STATE |
Packaging body material: | PLASTIC/EPOXY |
Encapsulation code: | LFBGA |
Encapsulation equivalent code: | BGA144,12X12,32 |
Package shape: | SQUARE |
Packaging form: | GRID ARRAY, LOW PROFILE, FINE PITCH |
Power Supply: | 2.5 V |
Certification status: | Not Qualified |
Refresh cycle: | four thousand and ninety-six |
Maximum height of seating surface: | 1.4 mm |
Self refresh: | YES |
Continuous burst length: | 2,4,8,FP |
Maximum standby current: | 0.08 A |
Subcategory: | DRAMs |
Maximum slewing rate: | 0.77 mA |
Maximum supply voltage (Vsup): | 2.625 V |
Minimum supply voltage (Vsup): | 2.375 V |
Nominal supply voltage (Vsup): | 2.5 V |
Surface mounting: | YES |
Technology: | CMOS |
Temperature class: | COMMERCIAL |
Terminal surface layer: | Tin/Lead (Sn/Pb) |
Terminal type: | BALL |
Terminal pitch: | 0.8 mm |
Terminal location: | BOTTOM |
Width: | 12 mm |
Base Number Matches: | one |
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