model: | IRF640NS |
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Lead free: | Lead |
Rohs certification or not: | Non conformance |
Lifecycle: | Transferred |
Part package code: | D2PAK |
Packing instructions: | PLASTIC, D2PAK-2/3 |
Number of stitches: | three |
Reach Compliance Code: | unknown |
ECCN code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Risk level: | five point zero three |
Other features: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Avalanche energy efficiency grade (Eas): | 247 mJ |
Enclosure connection: | DRAIN |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 200 V |
Maximum drain current (Abs) (ID): | 18 A |
Maximum drain current (ID): | 18 A |
Maximum drain source on resistance: | 0.15 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code: | TO-263AB |
JESD-30 code: | R-PSSO-G2 |
JESD-609 code: | e0 |
Humidity sensitivity level: | one |
Number of elements: | one |
Number of terminals: | two |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 175 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | SMALL OUTLINE |
Peak reflux temperature (° C): | two hundred and twenty-five |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 150 W |
Maximum pulse drain current (IDM): | 72 A |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Powers |
Surface mounting: | YES |
Terminal surface layer: | Tin/Lead (Sn/Pb) |
Terminal type: | GULL WING |
Terminal location: | SINGLE |
Maximum time at peak reflux temperature: | thirty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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