| model: | IRF640NHR |
|
| Lead free: | Lead |
| Rohs certification or not: | Non conformance |
| Lifecycle: | Obsolete |
| IHS Manufacturer: | INTERNATIONAL RECTIFIER CORP |
| Part package code: | TO-220AB |
| Packing instructions: | FLANGE MOUNT, R-PSFM-T3 |
| Number of stitches: | three |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| Risk level: | five point six five |
| Other features: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Avalanche energy efficiency grade (Eas): | 247 mJ |
| Enclosure connection: | DRAIN |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 200 V |
| Maximum drain current (ID): | 18 A |
| Maximum drain source on resistance: | 0.15 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-220AB |
| JESD-30 code: | R-PSFM-T3 |
| JESD-609 code: | e0 |
| Number of elements: | one |
| Number of terminals: | three |
| Operating mode: | ENHANCEMENT MODE |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | FLANGE MOUNT |
| Peak reflux temperature (° C): | two hundred and twenty-five |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum pulse drain current (IDM): | 72 A |
| Surface mounting: | NO |
| Terminal surface layer: | TIN LEAD |
| Terminal type: | THROUGH-HOLE |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | thirty |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
