model: | IRF640LPBF |
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Lead free: | Lead free |
Rohs certification or not: | accord with |
Lifecycle: | Active |
Part package code: | TO-262AA |
Packing instructions: | IN-LINE, R-PSIP-T3 |
Number of stitches: | three |
Reach Compliance Code: | compliant |
ECCN code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Risk level: | five point zero six |
Is Samacsys: | N |
Other features: | AVALANCHE RATED |
Avalanche energy efficiency grade (Eas): | 580 mJ |
Enclosure connection: | DRAIN |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 200 V |
Maximum drain current (Abs) (ID): | 18 A |
Maximum drain current (ID): | 18 A |
Maximum drain source on resistance: | 0.18 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code: | TO-262AA |
JESD-30 code: | R-PSIP-T3 |
Number of elements: | one |
Number of terminals: | three |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 175 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | IN-LINE |
Peak reflux temperature (° C): | two hundred and sixty |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 130 W |
Maximum pulse drain current (IDM): | 72 A |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface mounting: | NO |
Terminal type: | THROUGH-HOLE |
Terminal location: | SINGLE |
Maximum time at peak reflux temperature: | forty |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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