| model: | FZT849 |
|
| Rohs certification or not: | accord with |
| Lifecycle: | Active |
| IHS Manufacturer: | DIODES INC |
| Part package code: | SOT-223 |
| Packing instructions: | SOT-223, 4 PIN |
| Number of stitches: | four |
| Reach Compliance Code： | not_compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.75 |
| Risk level: | zero point eight one |
| Samacsys Confidence： | three |
| Samacsys Status： | Released |
| 2D Presentation： | https://componentsearchengine.com/2D/0T/251913.1.1.png |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=251913 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=251913 |
| 3D View： | https://componentsearchengine.com/viewer/3D.php?partID=251913 |
| Samacsys PartID： | two hundred and fifty-one thousand nine hundred and thirteen |
| Samacsys Image： | https://componentsearchengine.com/Images/9/FZT849.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/1/FZT849.jpg |
| Samacsys Pin Count： | four |
| Samacsys Part Category： | Transistor BJT NPN |
| Samacsys Package Category： | SOT223 (3-Pin) |
| Samacsys Footprint Name： | SOT223 (1) |
| Samacsys Released Date： | 2018-11-12 04:39:08 |
| Is Samacsys： | N |
| Enclosure connection: | COLLECTOR |
| Maximum collector current (IC): | 7 A |
| Maximum collector emitter voltage: | 30 V |
| to configure: | SINGLE |
| Minimum DC current gain (hFE): | one hundred |
| JESD-30 code: | R-PDSO-G4 |
| JESD-609 code: | e3 |
| Humidity sensitivity level: | one |
| Number of elements: | one |
| Number of terminals: | four |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | SMALL OUTLINE |
| Polarity/Channel Type: | NPN |
| Maximum power dissipation (Abs): | 3 W |
| Certification status: | Not Qualified |
| Subcategory: | Other Transistors |
| Surface mounting: | YES |
| Terminal surface layer: | Matte Tin (Sn) |
| Terminal type: | GULL WING |
| Terminal location: | DUAL |
| Transistor element material: | SILICON |
| Nominal transition frequency (fT): | 100 MHz |
| Base Number Matches： | one |
|
