| model: | FQPF7N65C |
|
| Brand Name： | ON Semiconductor |
| Lead free: | Lead free |
| Lifecycle: | Active |
| IHS Manufacturer: | ON SEMICONDUCTOR |
| Packing instructions: | FLANGE MOUNT, R-PSFM-T3 |
| Manufacturer's package code: | 221AT |
| Reach Compliance Code： | not_compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Factory Lead Time： | 1 week |
| Risk level: | one point five |
| Samacsys Confidence： | three |
| Samacsys Status： | Released |
| 2D Presentation： | https://componentsearchengine.com/2D/0T/1892260.1.1.png |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=1892260 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=1892260 |
| 3D View： | https://componentsearchengine.com/viewer/3D.php?partID=1892260 |
| Samacsys PartID： | one million eight hundred and ninety-two thousand two hundred and sixty |
| Samacsys Image： | https://componentsearchengine.com/Images/9/FQPF7N65C.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/1/FQPF7N65C.jpg |
| Samacsys Pin Count： | three |
| Samacsys Part Category： | MOSFET (N-Channel) |
| Samacsys Package Category： | Transistor Outline, Vertical |
| Samacsys Footprint Name： | 10DL2CZ47A(F) |
| Samacsys Released Date： | 2019-09-22 03:27:09 |
| Is Samacsys： | N |
| Other features: | FAST SWITCHING |
| Avalanche energy efficiency grade (Eas): | 212 mJ |
| Enclosure connection: | ISOLATED |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 650 V |
| Maximum drain current (Abs) (ID): | 7 A |
| Maximum drain current (ID): | 7 A |
| Maximum drain source on resistance: | 1.4 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-220AB |
| JESD-30 code: | R-PSFM-T3 |
| JESD-609 code: | e3 |
| Number of elements: | one |
| Number of terminals: | three |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | FLANGE MOUNT |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 52 W |
| Maximum pulse drain current (IDM): | 28 A |
| Certification status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface mounting: | NO |
| Terminal surface layer: | Tin (Sn) |
| Terminal type: | THROUGH-HOLE |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
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