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    • Shenzhen Xinfulin Electronics Co., Ltd

           This member has used this website for more than 15 years

    • FQP65N06C
    • number -
    • manufactor -
    • encapsulation -
    • Batch No -
    • -
    • QQ:2881495808 QQ：2881495808 copy
      QQ:308365177 QQ：308365177 copy
    • thirteen billion four hundred and eighteen million five hundred and sixty-four thousand three hundred and thirty-seven QQ:2881495808 QQ:308365177
    more
    • FQP65N06C Diagram

    • Gather the core city

        This member has used this website for more than 13 years
    • FQP65N06C
    • number 10212 
    • manufactor KIA Agent
    • encapsulation TO-220 
    • Batch No Latest batch
    • Original factory and original company
    • QQ:3008092965 QQ：3008092965 copy
      QQ:3008092965 QQ：3008092965 copy
    • 0755-83239307 QQ:3008092965 QQ:3008092965

    Product parameters of product model FQP65N06C and instructions for use of FQP65N06C

    Direct train with order
    FQP65N06J69Z Product Parameters
    model: FQP65N06J69Z
    Lifecycle: Obsolete
    Part package code: SFM
    Packing instructions: FLANGE MOUNT, R-PSFM-T3
    Number of stitches: three
    Reach Compliance Code： unknown
    ECCN code: EAR99
    Risk level: five point four five
    Avalanche energy efficiency grade (Eas): 650 mJ
    to configure: SINGLE WITH BUILT-IN DIODE
    Minimum drain source breakdown voltage: 60 V
    Maximum drain current (ID): 65 A
    Maximum drain source on resistance: 0.016 Ω
    FET technology: METAL-OXIDE SEMICONDUCTOR
    JESD-30 code: R-PSFM-T3
    Number of elements: one
    Number of terminals: three
    Operating mode: ENHANCEMENT MODE
    Maximum operating temperature: 175 °C
    Packaging body material: PLASTIC/EPOXY
    Package shape: RECTANGULAR
    Packaging form: FLANGE MOUNT
    Polarity/Channel Type: N-CHANNEL
    Maximum pulse drain current (IDM): 260 A
    Certification status: Not Qualified
    Surface mounting: NO
    Terminal type: THROUGH-HOLE
    Terminal location: SINGLE
    Transistor applications: SWITCHING
    Transistor element material: SILICON
    Base Number Matches： one
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