| model: | FQP4N80 |
|
| Brand Name： | ON Semiconductor |
| Lead free: | Lead free |
| Lifecycle: | Active |
| IHS Manufacturer: | ON SEMICONDUCTOR |
| Packing instructions: | FLANGE MOUNT, R-PSFM-T3 |
| Manufacturer's package code: | 340AT |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Factory Lead Time： | 1 week |
| Risk level: | one point zero three |
| Avalanche energy efficiency grade (Eas): | 460 mJ |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 800 V |
| Maximum drain current (Abs) (ID): | 3.9 A |
| Maximum drain current (ID): | 3.9 A |
| Maximum drain source on resistance: | 3.6 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-220AB |
| JESD-30 code: | R-PSFM-T3 |
| JESD-609 code: | e3 |
| Number of elements: | one |
| Number of terminals: | three |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | FLANGE MOUNT |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 130 W |
| Maximum pulse drain current (IDM): | 15.6 A |
| Certification status: | Not Qualified |
| Subcategory: | FET General Purpose Power |
| Surface mounting: | NO |
| Terminal surface layer: | Tin (Sn) |
| Terminal type: | THROUGH-HOLE |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
|
