| model: | FQP27P06 |
|
| Brand Name： | ON Semiconductor |
| Lead free: | Lead free |
| Lifecycle: | Active |
| IHS Manufacturer: | ON SEMICONDUCTOR |
| Packing instructions: | FLANGE MOUNT, R-PSFM-T3 |
| Manufacturer's package code: | 340AT |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Factory Lead Time： | 1 week |
| Risk level: | zero point eight eight |
| Samacsys Confidence： | four |
| Samacsys Status： | Released |
| 2D Presentation： | https://componentsearchengine.com/2D/0T/247586.1.5.png |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=247586 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=247586 |
| 3D View： | https://componentsearchengine.com/viewer/3D.php?partID=247586 |
| Samacsys PartID： | two hundred and forty-seven thousand five hundred and eighty-six |
| Samacsys Image： | https://componentsearchengine.com/Images/9/FQP27P06.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/1/FQP27P06.jpg |
| Samacsys Pin Count： | three |
| Samacsys Part Category： | Transistor |
| Samacsys Package Category： | Transistor Outline, Vertical |
| Samacsys Footprint Name： | TO-220-ren2 |
| Samacsys Released Date： | 2016-03-14 12:05:17 |
| Is Samacsys： | N |
| Avalanche energy efficiency grade (Eas): | 560 mJ |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Minimum drain source breakdown voltage: | 60 V |
| Maximum drain current (Abs) (ID): | 27 A |
| Maximum drain current (ID): | 27 A |
| Maximum drain source on resistance: | 0.07 Ω |
| FET technology: | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code: | TO-220AB |
| JESD-30 code: | R-PSFM-T3 |
| JESD-609 code: | e3 |
| Number of elements: | one |
| Number of terminals: | three |
| Operating mode: | ENHANCEMENT MODE |
| Maximum operating temperature: | 175 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | FLANGE MOUNT |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | P-CHANNEL |
| Maximum power dissipation (Abs): | 120 W |
| Maximum pulse drain current (IDM): | 108 A |
| Certification status: | Not Qualified |
| Subcategory: | Other Transistors |
| Surface mounting: | NO |
| Terminal surface layer: | Tin (Sn) |
| Terminal type: | THROUGH-HOLE |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | SWITCHING |
| Transistor element material: | SILICON |
| Base Number Matches： | one |
|
