model: | FQA20N40 |
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Rohs certification or not: | accord with |
Lifecycle: | Obsolete |
Part package code: | TO-3P |
Packing instructions: | TO-3P, 3 PIN |
Number of stitches: | three |
Reach Compliance Code: | unknown |
Risk level: | five point eight one |
Avalanche energy efficiency grade (Eas): | 1150 mJ |
to configure: | SINGLE WITH BUILT-IN DIODE |
Minimum drain source breakdown voltage: | 400 V |
Maximum drain current (Abs) (ID): | 19.5 A |
Maximum drain current (ID): | 19.5 A |
Maximum drain source on resistance: | 0.22 Ω |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code: | R-PSFM-T3 |
JESD-609 code: | e3 |
Number of elements: | one |
Number of terminals: | three |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Packaging body material: | PLASTIC/EPOXY |
Package shape: | RECTANGULAR |
Packaging form: | FLANGE MOUNT |
Peak reflux temperature (° C): | NOT APPLICABLE |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 200 W |
Maximum pulse drain current (IDM): | 78 A |
Certification status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface mounting: | NO |
Terminal surface layer: | Matte Tin (Sn) |
Terminal type: | THROUGH-HOLE |
Terminal location: | SINGLE |
Maximum time at peak reflux temperature: | NOT APPLICABLE |
Transistor applications: | SWITCHING |
Transistor element material: | SILICON |
Base Number Matches: | one |
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