| model: | FGL40N120ANDTU |
|
| Brand Name： | Fairchild Semiconductor |
| Lead free: | Lead free |
| Rohs certification or not: | accord with |
| Lifecycle: | Transferred |
| IHS Manufacturer: | FAIRCHILD SEMICONDUCTOR CORP |
| Part package code: | TO-264 |
| Packing instructions: | FLANGE MOUNT, R-PSFM-T3 |
| Number of stitches: | three |
| Manufacturer's package code: | 3LD; TO264; MOLDED; JEDEC VARIATION AA |
| Reach Compliance Code： | compliant |
| ECCN code: | EAR99 |
| HTS Code: | 8541.29.00.95 |
| Risk level: | four point four three |
| Samacsys Confidence： | three |
| Samacsys Status： | Released |
| 2D Presentation： | https://componentsearchengine.com/2D/0T/968540.2.1.png |
| Schematic Symbol： | https://componentsearchengine.com/symbol.php?partID=968540 |
| PCB Footprint： | https://componentsearchengine.com/footprint.php?partID=968540 |
| 3D View： | https://componentsearchengine.com/viewer/3D.php?partID=968540 |
| Samacsys PartID： | nine hundred and sixty-eight thousand five hundred and forty |
| Samacsys Image： | https://componentsearchengine.com/Images/9/FGL40N120ANDTU.jpg |
| Samacsys Thumbnail Image： | https://componentsearchengine.com/Thumbnails/2/FGL40N120ANDTU.jpg |
| Samacsys Pin Count： | three |
| Samacsys Part Category： | Transistor IGBT |
| Samacsys Package Category： | Transistor Outline, Vertical |
| Samacsys Footprint Name： | FGL40N120ANDTU_ |
| Samacsys Released Date： | 2019-02-07 10:43:54 |
| Is Samacsys： | N |
| Maximum collector current (IC): | 64 A |
| Maximum collector emitter voltage: | 1200 V |
| to configure: | SINGLE WITH BUILT-IN DIODE |
| Maximum landing time (tf): | 80 ns |
| Maximum threshold voltage of gate emitter: | 7.5 V |
| Gate emitter maximum voltage: | 25 V |
| JEDEC-95 code: | TO-264AA |
| JESD-30 code: | R-PSFM-T3 |
| JESD-609 code: | e3 |
| Number of elements: | one |
| Number of terminals: | three |
| Maximum operating temperature: | 150 °C |
| Packaging body material: | PLASTIC/EPOXY |
| Package shape: | RECTANGULAR |
| Packaging form: | FLANGE MOUNT |
| Peak reflux temperature (° C): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Maximum power dissipation (Abs): | 500 W |
| Certification status: | Not Qualified |
| Subcategory: | Insulated Gate BIP Transistors |
| Surface mounting: | NO |
| Terminal surface layer: | Matte Tin (Sn) |
| Terminal type: | THROUGH-HOLE |
| Terminal location: | SINGLE |
| Maximum time at peak reflux temperature: | NOT SPECIFIED |
| Transistor applications: | POWER CONTROL |
| Transistor element material: | SILICON |
| Nominal disconnection time (toff): | 165 ns |
| Nominal switching on time (ton): | 45 ns |
| Base Number Matches： | one |
|
